JPS55113379A - Method of fabrication for semiconductor pressure- sensitive element - Google Patents
Method of fabrication for semiconductor pressure- sensitive elementInfo
- Publication number
- JPS55113379A JPS55113379A JP1953279A JP1953279A JPS55113379A JP S55113379 A JPS55113379 A JP S55113379A JP 1953279 A JP1953279 A JP 1953279A JP 1953279 A JP1953279 A JP 1953279A JP S55113379 A JPS55113379 A JP S55113379A
- Authority
- JP
- Japan
- Prior art keywords
- oxide film
- layer
- temperature
- impurity
- sensitive element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Pressure Sensors (AREA)
Abstract
PURPOSE: To reduce the dependence of temperature on the sensitivity of a semiconductor pressure- sensitive element by removing an oxide film produced on the diffused surface of the element after diffusing impurity in the element and then thermally oxidizing the silicon surface of the element to set the impurity density to predetermined value.
CONSTITUTION: After an N-type silicon semiconductor substrate is thermally oxidized at this temperature to form an oxide film 4 thereon, the film 4 is locally removed on the basis of a pattern of piezo-resistive element, and P-type impurity is diffused in the substrate to form a piezo-resistive layer 5. Then, an oxide film 6 formed on the upper surface of the layer 5 is removed to expose the silicon surface of the substrate, and the silicon surface is thermally oxidized at lower temperature than the impurity diffusing temperature to set the impurity density of the surface of the layer 5 to approx. 2×1020atom/cm3. At this time an oxide film 7 is newly formed on the surface of the layer 5. An oxide film 8 is further formed on the surface of the layer 5 by a CVD process. Then, the films 7, 8 are locally removed, an aluminum film 9 is evaporated thereon, and an aluminum electrode pattern is subsequently formed thereon. Thus, this method can provide a pressure-sensitive element which has low dependence of temperature on the sensitivity thereof.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1953279A JPS55113379A (en) | 1979-02-21 | 1979-02-21 | Method of fabrication for semiconductor pressure- sensitive element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1953279A JPS55113379A (en) | 1979-02-21 | 1979-02-21 | Method of fabrication for semiconductor pressure- sensitive element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS55113379A true JPS55113379A (en) | 1980-09-01 |
| JPS6153874B2 JPS6153874B2 (en) | 1986-11-19 |
Family
ID=12001937
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1953279A Granted JPS55113379A (en) | 1979-02-21 | 1979-02-21 | Method of fabrication for semiconductor pressure- sensitive element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS55113379A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60253279A (en) * | 1984-05-29 | 1985-12-13 | Toyota Central Res & Dev Lab Inc | Measuring instrument for strain in semiconductor |
-
1979
- 1979-02-21 JP JP1953279A patent/JPS55113379A/en active Granted
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60253279A (en) * | 1984-05-29 | 1985-12-13 | Toyota Central Res & Dev Lab Inc | Measuring instrument for strain in semiconductor |
| JPH0337750B2 (en) * | 1984-05-29 | 1991-06-06 | Toyoda Chuo Kenkyusho Kk |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6153874B2 (en) | 1986-11-19 |
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