JPS5546539A - Method of manufacturing semiconductor device - Google Patents
Method of manufacturing semiconductor deviceInfo
- Publication number
- JPS5546539A JPS5546539A JP11981678A JP11981678A JPS5546539A JP S5546539 A JPS5546539 A JP S5546539A JP 11981678 A JP11981678 A JP 11981678A JP 11981678 A JP11981678 A JP 11981678A JP S5546539 A JPS5546539 A JP S5546539A
- Authority
- JP
- Japan
- Prior art keywords
- produced
- substrate
- hole
- film
- oxide film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE: To raise the accuracy of adjustment of a mask and the efficiency of work, by providing step parts on the surface of a semiconductor substrate before entirely removing a first oxide film.
CONSTITUTION: A first oxide film 2 is produced on the surface of an N-type silicon substrate 1. A hole 3 for base diffusion is opened through the film 2. A second oxide film 9 is produced on the surface of the substrate 1 exposed through the hole 3. Since the film 9 is produced by the reaction of the substrate 1 with supplied oxygen, step parts of thickness equal to about 40% of that of the oxide film are provided on the substrate 1. The film 9 is then removed. Boron is diffused through the hole 3 so that a boron deposition layer 4 is produced. The film 2 is entirely removed. A diffused base region 5 is produced by boron extension diffusion. A third oxide film 6 is produced. A hole 7 for emitter diffusion is opened. Phosphorus is diffused into the surface of the substrate 1 through the hole 7 so that a diffused emitter region 8 is produced. Because the substrate 1 is provided with the step parts, a mask for making the hole 7 is easily positioned on the region 5. This results in raising the accuracy of adjustment of the mask and greatly shortening the time of work.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11981678A JPS5546539A (en) | 1978-09-27 | 1978-09-27 | Method of manufacturing semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11981678A JPS5546539A (en) | 1978-09-27 | 1978-09-27 | Method of manufacturing semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5546539A true JPS5546539A (en) | 1980-04-01 |
Family
ID=14770941
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11981678A Pending JPS5546539A (en) | 1978-09-27 | 1978-09-27 | Method of manufacturing semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5546539A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6159060A (en) * | 1984-08-29 | 1986-03-26 | Shimadzu Corp | Hydraulic machine type transmission |
| JPS629625A (en) * | 1985-07-08 | 1987-01-17 | Rohm Co Ltd | Method for formation of microscopic electrode |
-
1978
- 1978-09-27 JP JP11981678A patent/JPS5546539A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6159060A (en) * | 1984-08-29 | 1986-03-26 | Shimadzu Corp | Hydraulic machine type transmission |
| JPS629625A (en) * | 1985-07-08 | 1987-01-17 | Rohm Co Ltd | Method for formation of microscopic electrode |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS551103A (en) | Semiconductor resistor | |
| JPS577959A (en) | Semiconductor device | |
| JPS5546539A (en) | Method of manufacturing semiconductor device | |
| JPS5310265A (en) | Impurity diffusion method | |
| JPS5244169A (en) | Process for production of semiconductor device | |
| JPS559425A (en) | Manufacturing method for semiconductor device | |
| JPS52154367A (en) | Production of semiconductor device | |
| JPS5538042A (en) | Manufacturing of semiconductor device | |
| JPS5265664A (en) | Selective introduction of impurity in compound semiconductor substrate | |
| JPS57176764A (en) | Manufacture of semiconductor device | |
| JPS55113379A (en) | Method of fabrication for semiconductor pressure- sensitive element | |
| JPS57128063A (en) | Semiconductor device and manufacture thereof | |
| JPS51113461A (en) | A method for manufacturing semiconductor devices | |
| JPS54101663A (en) | Aluminum diffusion method | |
| JPS5559738A (en) | Preparation of semiconductor device | |
| JPS5459873A (en) | Production of semiconductor device | |
| JPS57143862A (en) | Manufacture of semiconductor integrated circuit | |
| JPS5448171A (en) | Manufacture of semiconductor device | |
| JPS5530860A (en) | Method of making semiconductor device | |
| JPS56129371A (en) | Manufacture of semiconductor ic device | |
| JPS5578568A (en) | Manufacture of semiconductor device | |
| JPS52117560A (en) | Mask formation method | |
| JPS54130877A (en) | Production of semiconductor device | |
| JPS5521159A (en) | Manufacturing method for mutual compensated type semiconductor device | |
| JPS53117963A (en) | Production of semiconductor device |