JPS5457877A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5457877A
JPS5457877A JP10394378A JP10394378A JPS5457877A JP S5457877 A JPS5457877 A JP S5457877A JP 10394378 A JP10394378 A JP 10394378A JP 10394378 A JP10394378 A JP 10394378A JP S5457877 A JPS5457877 A JP S5457877A
Authority
JP
Japan
Prior art keywords
diffusion layer
substrate
film
type
concavity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10394378A
Other languages
Japanese (ja)
Other versions
JPS62577B2 (en
Inventor
Ichiro Imaizumi
Masatoshi Kimura
Keijiro Uehara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP10394378A priority Critical patent/JPS5457877A/en
Publication of JPS5457877A publication Critical patent/JPS5457877A/en
Publication of JPS62577B2 publication Critical patent/JPS62577B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Bipolar Transistors (AREA)
  • Element Separation (AREA)
  • Bipolar Integrated Circuits (AREA)

Abstract

PURPOSE: To simplify the manufacture processes of a semicondcuctor device which has an epitaxial layer whose thickness varies with dielectric strength even though the entire thickness is uniform on the same substrate, by providing a collector buried layer to the surface region at the circumference of the concavity of the substrate.
CONSTITUTION: After oxidized film 2 is formed on silicon substrate 1, a rectangular window is provided and concabity part 21 is formed. Next, buried n+-diffusion layer 3 is formed, n-type epitaxial layer 4 is grown, and oxidized film 42 of an etching masking material is formed only on concavity part 41 of epitaxial layer 4 where the concavity of the substrate is copied. Then, the surface is flattened, oxidized film 42 is removed, and the surface is oxidized, thereby forming a SiO2 film. This film is provided with a window, insulating P-type diffusion layer 5 is formed, and the substrate is separated into high-dielectric strength part 101 and low-dielectric strength part 102. Provided that 6 is a collector-punching n+-type diffusion layer, 7 is a P-type base diffusion layer and 8 is a n-type emitter diffusion layer
COPYRIGHT: (C)1979,JPO&Japio
JP10394378A 1978-08-28 1978-08-28 Semiconductor device Granted JPS5457877A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10394378A JPS5457877A (en) 1978-08-28 1978-08-28 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10394378A JPS5457877A (en) 1978-08-28 1978-08-28 Semiconductor device

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP12347477A Division JPS5457865A (en) 1977-10-17 1977-10-17 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5457877A true JPS5457877A (en) 1979-05-10
JPS62577B2 JPS62577B2 (en) 1987-01-08

Family

ID=14367517

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10394378A Granted JPS5457877A (en) 1978-08-28 1978-08-28 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5457877A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5630737A (en) * 1979-08-21 1981-03-27 Seiko Epson Corp Semiconductor ic circuit

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5630737A (en) * 1979-08-21 1981-03-27 Seiko Epson Corp Semiconductor ic circuit
JPH0147010B2 (en) * 1979-08-21 1989-10-12 Seiko Epson Corp

Also Published As

Publication number Publication date
JPS62577B2 (en) 1987-01-08

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