JPS5457877A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS5457877A JPS5457877A JP10394378A JP10394378A JPS5457877A JP S5457877 A JPS5457877 A JP S5457877A JP 10394378 A JP10394378 A JP 10394378A JP 10394378 A JP10394378 A JP 10394378A JP S5457877 A JPS5457877 A JP S5457877A
- Authority
- JP
- Japan
- Prior art keywords
- diffusion layer
- substrate
- film
- type
- concavity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Bipolar Transistors (AREA)
- Element Separation (AREA)
- Bipolar Integrated Circuits (AREA)
Abstract
PURPOSE: To simplify the manufacture processes of a semicondcuctor device which has an epitaxial layer whose thickness varies with dielectric strength even though the entire thickness is uniform on the same substrate, by providing a collector buried layer to the surface region at the circumference of the concavity of the substrate.
CONSTITUTION: After oxidized film 2 is formed on silicon substrate 1, a rectangular window is provided and concabity part 21 is formed. Next, buried n+-diffusion layer 3 is formed, n-type epitaxial layer 4 is grown, and oxidized film 42 of an etching masking material is formed only on concavity part 41 of epitaxial layer 4 where the concavity of the substrate is copied. Then, the surface is flattened, oxidized film 42 is removed, and the surface is oxidized, thereby forming a SiO2 film. This film is provided with a window, insulating P-type diffusion layer 5 is formed, and the substrate is separated into high-dielectric strength part 101 and low-dielectric strength part 102. Provided that 6 is a collector-punching n+-type diffusion layer, 7 is a P-type base diffusion layer and 8 is a n-type emitter diffusion layer
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10394378A JPS5457877A (en) | 1978-08-28 | 1978-08-28 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10394378A JPS5457877A (en) | 1978-08-28 | 1978-08-28 | Semiconductor device |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP12347477A Division JPS5457865A (en) | 1977-10-17 | 1977-10-17 | Manufacture of semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5457877A true JPS5457877A (en) | 1979-05-10 |
JPS62577B2 JPS62577B2 (en) | 1987-01-08 |
Family
ID=14367517
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP10394378A Granted JPS5457877A (en) | 1978-08-28 | 1978-08-28 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5457877A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5630737A (en) * | 1979-08-21 | 1981-03-27 | Seiko Epson Corp | Semiconductor ic circuit |
-
1978
- 1978-08-28 JP JP10394378A patent/JPS5457877A/en active Granted
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5630737A (en) * | 1979-08-21 | 1981-03-27 | Seiko Epson Corp | Semiconductor ic circuit |
JPH0147010B2 (en) * | 1979-08-21 | 1989-10-12 | Seiko Epson Corp |
Also Published As
Publication number | Publication date |
---|---|
JPS62577B2 (en) | 1987-01-08 |
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