JPS5562748A - Method of fabricating semiconductor device - Google Patents

Abstract

PURPOSE: To eliminate contact of two buried regions formed on a semiconductor substrate for a semiconductor device by providing an oxide film disposed on the substrate at both sides of the buried regions, polycrystallizing only the surface of the oxide film when growing an epitaxial layer on the entire surface thereof, and forming a separate region therewith as standard.

CONSTITUTION: An n⁺-type buried region 2 is diffused on a p-type silicon substrate 1, a SiO₂ film 3 is coated on the entire surface thereof in such a manner that the film 3 is retained only in the region 12 used to position with the separate region forming after the buried region 2, and the others are all removed therefrom. Then, the entire surface is grown with an n-type layer 4 in epitaxial grown, and polycrystalline layer 14 is produced on the retained film 3. Thus, the pattern 13 of the region 2 allows to be accurately coincident to the pattern 15 on the polycrystalline layer 14 corresponding thereto, and separately diffused aligning pattern 17 is positioned onto the buried aligning pattern 16 thus produced. Thus, the buried region may not contact with the separate region to occur no improper dielectric strength thereat.

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