JPS5457865A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5457865A
JPS5457865A JP12347477A JP12347477A JPS5457865A JP S5457865 A JPS5457865 A JP S5457865A JP 12347477 A JP12347477 A JP 12347477A JP 12347477 A JP12347477 A JP 12347477A JP S5457865 A JPS5457865 A JP S5457865A
Authority
JP
Japan
Prior art keywords
surface
oxidized film
dielectric
layer
epitaxial
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12347477A
Inventor
Ichiro Imaizumi
Masatoshi Kimura
Keijiro Uehara
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP12347477A priority Critical patent/JPS5457865A/en
Priority claimed from US05/950,671 external-priority patent/US4278987A/en
Publication of JPS5457865A publication Critical patent/JPS5457865A/en
Application status is Pending legal-status Critical

Links

Abstract

PURPOSE: To form a semiconductor device whose epitaxial-layer thickness varies with dielectric strength even through its surface is flat, through two etching processes and one entire-surface epitaxial growth process.
CONSTITUTION: On P-type silicon substrate 51 with a surface in crystal direction (100), oxidized film 52 is formed and then, this oxidized film 52 is provided with a rectangular window composed of parallel sides in crystal direction [100]. Next, the substrate is etched by using an anisotropical etching solution, thereby forming concavity 501. Then, buried N+-diffusion layer 53 is formed, N-type epitaxial layer 54 is grown, and oxidized film 55 of an etching masking material is formed on only concavity 502 where the concavity of the substrate is copied. Afterward, the low- dielectric-strength-side epitaxial layer is etched by using the anisotropical etching solution to flatten the surface and oxidized film 55 is removed. Further, an oxidized film is formed on the epitaxial-layer surface through surface oxidization, a window for isolation diffusion is opened, and this substrate is separated into high-dielectric- strength part 101 and low-dielectric-strength part 102 by P-type diffusion layer 59 for isolation
COPYRIGHT: (C)1979,JPO&Japio
JP12347477A 1977-10-17 1977-10-17 Manufacture of semiconductor device Pending JPS5457865A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12347477A JPS5457865A (en) 1977-10-17 1977-10-17 Manufacture of semiconductor device

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP12347477A JPS5457865A (en) 1977-10-17 1977-10-17 Manufacture of semiconductor device
US05/950,671 US4278987A (en) 1977-10-17 1978-10-12 Junction isolated IC with thick EPI portion having sides at least 20 degrees from (110) orientations
DE19782845062 DE2845062C2 (en) 1977-10-17 1978-10-16
US06/236,841 US4362599A (en) 1977-10-17 1981-02-23 Method for making semiconductor device

Publications (1)

Publication Number Publication Date
JPS5457865A true JPS5457865A (en) 1979-05-10

Family

ID=14861513

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12347477A Pending JPS5457865A (en) 1977-10-17 1977-10-17 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5457865A (en)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4960688A (en) * 1972-10-13 1974-06-12
JPS5057590A (en) * 1973-09-20 1975-05-20
JPS5269587A (en) * 1975-12-08 1977-06-09 Hitachi Ltd Device and manufacture for high voltage resisting semiconductor

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4960688A (en) * 1972-10-13 1974-06-12
JPS5057590A (en) * 1973-09-20 1975-05-20
JPS5269587A (en) * 1975-12-08 1977-06-09 Hitachi Ltd Device and manufacture for high voltage resisting semiconductor

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