JPS5457865A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS5457865A JPS5457865A JP12347477A JP12347477A JPS5457865A JP S5457865 A JPS5457865 A JP S5457865A JP 12347477 A JP12347477 A JP 12347477A JP 12347477 A JP12347477 A JP 12347477A JP S5457865 A JPS5457865 A JP S5457865A
- Authority
- JP
- Japan
- Prior art keywords
- oxidized film
- dielectric
- layer
- epitaxial
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE: To form a semiconductor device whose epitaxial-layer thickness varies with dielectric strength even through its surface is flat, through two etching processes and one entire-surface epitaxial growth process.
CONSTITUTION: On P-type silicon substrate 51 with a surface in crystal direction (100), oxidized film 52 is formed and then, this oxidized film 52 is provided with a rectangular window composed of parallel sides in crystal direction [100]. Next, the substrate is etched by using an anisotropical etching solution, thereby forming concavity 501. Then, buried N+-diffusion layer 53 is formed, N-type epitaxial layer 54 is grown, and oxidized film 55 of an etching masking material is formed on only concavity 502 where the concavity of the substrate is copied. Afterward, the low- dielectric-strength-side epitaxial layer is etched by using the anisotropical etching solution to flatten the surface and oxidized film 55 is removed. Further, an oxidized film is formed on the epitaxial-layer surface through surface oxidization, a window for isolation diffusion is opened, and this substrate is separated into high-dielectric- strength part 101 and low-dielectric-strength part 102 by P-type diffusion layer 59 for isolation
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12347477A JPS5457865A (en) | 1977-10-17 | 1977-10-17 | Manufacture of semiconductor device |
| US05/950,671 US4278987A (en) | 1977-10-17 | 1978-10-12 | Junction isolated IC with thick EPI portion having sides at least 20 degrees from (110) orientations |
| DE2845062A DE2845062C2 (en) | 1977-10-17 | 1978-10-16 | Semiconductor device and method for its manufacture |
| US06/236,841 US4362599A (en) | 1977-10-17 | 1981-02-23 | Method for making semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12347477A JPS5457865A (en) | 1977-10-17 | 1977-10-17 | Manufacture of semiconductor device |
Related Child Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10394378A Division JPS5457877A (en) | 1978-08-28 | 1978-08-28 | Semiconductor device |
| JP57118558A Division JPS5843903B2 (en) | 1982-07-09 | 1982-07-09 | Manufacturing method of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5457865A true JPS5457865A (en) | 1979-05-10 |
Family
ID=14861513
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12347477A Pending JPS5457865A (en) | 1977-10-17 | 1977-10-17 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5457865A (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4960688A (en) * | 1972-10-13 | 1974-06-12 | ||
| JPS5057590A (en) * | 1973-09-20 | 1975-05-20 | ||
| JPS5269587A (en) * | 1975-12-08 | 1977-06-09 | Hitachi Ltd | Device and manufacture for high voltage resisting semiconductor |
-
1977
- 1977-10-17 JP JP12347477A patent/JPS5457865A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4960688A (en) * | 1972-10-13 | 1974-06-12 | ||
| JPS5057590A (en) * | 1973-09-20 | 1975-05-20 | ||
| JPS5269587A (en) * | 1975-12-08 | 1977-06-09 | Hitachi Ltd | Device and manufacture for high voltage resisting semiconductor |
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