JPS55124238A - Method of fabricating semiconductor device - Google Patents

Method of fabricating semiconductor device

Info

Publication number
JPS55124238A
JPS55124238A JP3280079A JP3280079A JPS55124238A JP S55124238 A JPS55124238 A JP S55124238A JP 3280079 A JP3280079 A JP 3280079A JP 3280079 A JP3280079 A JP 3280079A JP S55124238 A JPS55124238 A JP S55124238A
Authority
JP
Japan
Prior art keywords
layer
diffusion
gettering
oxide film
element formation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3280079A
Other languages
Japanese (ja)
Other versions
JPS5741818B2 (en
Inventor
Kazutoshi Nagano
Kosei Kajiwara
Tatsunori Nakajima
Kosuke Yasuno
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP3280079A priority Critical patent/JPS55124238A/en
Publication of JPS55124238A publication Critical patent/JPS55124238A/en
Publication of JPS5741818B2 publication Critical patent/JPS5741818B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering

Abstract

PURPOSE:To perform the forming process efficiently and effectively of deep diffusion layers such as bipolar IC by applying a gettering process to a reverse side of the element formation, whereby the diffusion layer of element formation is formed at a higher speed. CONSTITUTION:An oxide film 2 is formed on a main plane of a P-type silicon substrate 1 and a N<+> buried-layer 4 is formed by a heat diffusion method. The oxide film 2 is eleminated and then an N-type silicon layer 5 is made to grow epitaxially on the surface of an oxide film 6 formed. A silicon nitrogenized film 7 is formed by a heat decomposing method and annealed. And then it undergoes a gettering process. For the separation/diffusion purpose, a window 8 is formed in the oxide film 6 and a P-type isolated diffused layer 9 is formed. In this case, the time necessary for the diffusing is extremely limited because the gettering process has been done already. Finally, each element is formed by using a conventional diffusing technique after eliminating the gettering-processed layers. In this cace, however, a usual diffusion time can be applied to as there is no gettering-processed layer.
JP3280079A 1979-03-19 1979-03-19 Method of fabricating semiconductor device Granted JPS55124238A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3280079A JPS55124238A (en) 1979-03-19 1979-03-19 Method of fabricating semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3280079A JPS55124238A (en) 1979-03-19 1979-03-19 Method of fabricating semiconductor device

Publications (2)

Publication Number Publication Date
JPS55124238A true JPS55124238A (en) 1980-09-25
JPS5741818B2 JPS5741818B2 (en) 1982-09-04

Family

ID=12368911

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3280079A Granted JPS55124238A (en) 1979-03-19 1979-03-19 Method of fabricating semiconductor device

Country Status (1)

Country Link
JP (1) JPS55124238A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5878671A (en) * 1981-11-04 1983-05-12 フジ産興株式会社 Pulse type electric treating device
JP2008188376A (en) * 2007-02-08 2008-08-21 Matsushita Electric Ind Co Ltd Suction head for vacuum cleaner and vacuum cleaner using the same
US10524629B2 (en) 2005-12-02 2020-01-07 Irobot Corporation Modular Robot
US11737632B2 (en) 2005-12-02 2023-08-29 Irobot Corporation Modular robot

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5878671A (en) * 1981-11-04 1983-05-12 フジ産興株式会社 Pulse type electric treating device
JPS5858101B2 (en) * 1981-11-04 1983-12-23 フジ産興株式会社 Pulse electric therapy device
US10524629B2 (en) 2005-12-02 2020-01-07 Irobot Corporation Modular Robot
US11737632B2 (en) 2005-12-02 2023-08-29 Irobot Corporation Modular robot
JP2008188376A (en) * 2007-02-08 2008-08-21 Matsushita Electric Ind Co Ltd Suction head for vacuum cleaner and vacuum cleaner using the same

Also Published As

Publication number Publication date
JPS5741818B2 (en) 1982-09-04

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