JPS5598843A - Method of isolating semiconductor integrated circuit - Google Patents
Method of isolating semiconductor integrated circuitInfo
- Publication number
- JPS5598843A JPS5598843A JP498879A JP498879A JPS5598843A JP S5598843 A JPS5598843 A JP S5598843A JP 498879 A JP498879 A JP 498879A JP 498879 A JP498879 A JP 498879A JP S5598843 A JPS5598843 A JP S5598843A
- Authority
- JP
- Japan
- Prior art keywords
- isolating
- layer
- region
- insulating
- type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Element Separation (AREA)
- Local Oxidation Of Silicon (AREA)
- Bipolar Transistors (AREA)
Abstract
PURPOSE: To reduce the isolating area of isolating region for insulating and isolating a reverse conductivity type epitaxial layer grown on one conductivity type semiconductor substrate by forming a deep one conductivity region in the epiaxial layer between two shallow oxide layers formed in parallel in the isolating region when insulating and isolating the epitaxial layer.
CONSTITUTION: When an n-type layer 2 is epitaxially grown on a p-type silicon substrate 1 and isolated in an island state using an insulating region, an SiO2 film 9 and an Si3N4 film 11 are first laminated on the layer 2. Then, two openings 12 and 13 are perforated at an interval on the region to be formed with an isolating region, and heat treated, thereby forming shallow oxide layers 14 and 15 in the layer 2 exposed through the openings 12 and 13. Thereafter, the films 11 and 9 of the region surrounded by the layers 14 and 15 are removed, and a p+-type insulating region 17 is diffused in the portion 16 of the exposed layer 2, thereby isolating the layer 2 in an island state. Thus, the area required for insulating and isolating the layer 2 can be reduced, thereby obtaining an IC having high integrating degree.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP498879A JPS5598843A (en) | 1979-01-20 | 1979-01-20 | Method of isolating semiconductor integrated circuit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP498879A JPS5598843A (en) | 1979-01-20 | 1979-01-20 | Method of isolating semiconductor integrated circuit |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5598843A true JPS5598843A (en) | 1980-07-28 |
Family
ID=11598981
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP498879A Pending JPS5598843A (en) | 1979-01-20 | 1979-01-20 | Method of isolating semiconductor integrated circuit |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5598843A (en) |
-
1979
- 1979-01-20 JP JP498879A patent/JPS5598843A/en active Pending
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS5586151A (en) | Manufacture of semiconductor integrated circuit | |
JPS55105344A (en) | Semiconductor device | |
JPS5598843A (en) | Method of isolating semiconductor integrated circuit | |
JPS54141596A (en) | Semiconductor device | |
JPS56157044A (en) | Insulating isolation of semiconductor element | |
JPS55124238A (en) | Method of fabricating semiconductor device | |
JPS5568650A (en) | Manufacturing method of semiconductor device | |
JPS57143841A (en) | Insulation separating composition | |
JPS5522878A (en) | Insulation gate type field effect semiconductor device | |
JPS55105340A (en) | Semiconductor device and its manufacturing method | |
JPS55102263A (en) | Semiconductor integrated circuit | |
JPS5541789A (en) | Integrated semiconductor device and manufacturing the same | |
JPS5472985A (en) | Manufacture of integrated-circuit device | |
JPS54158889A (en) | Manufacture of semiconductor device | |
JPS55111169A (en) | Method of manufacturing semiconductor device | |
JPS5655060A (en) | Semiconductor integrated circuit device | |
JPS5637622A (en) | Manufacture of semiconductor device | |
JPS5753958A (en) | Semiconductor device | |
JPS5771168A (en) | Semiconductor integrated circuit device | |
JPS5586152A (en) | Manufacture of semiconductor device | |
JPS551108A (en) | Mis integrated circuit | |
JPS5516412A (en) | Semiconductor device | |
JPS55141752A (en) | Semiconductor device and fabricating method of the same | |
JPS5331982A (en) | Semiconductor device | |
JPS5645046A (en) | Semiconductor integrated circuit device and manufacture thereof |