JPS55111169A - Method of manufacturing semiconductor device - Google Patents

Method of manufacturing semiconductor device

Info

Publication number
JPS55111169A
JPS55111169A JP1891179A JP1891179A JPS55111169A JP S55111169 A JPS55111169 A JP S55111169A JP 1891179 A JP1891179 A JP 1891179A JP 1891179 A JP1891179 A JP 1891179A JP S55111169 A JPS55111169 A JP S55111169A
Authority
JP
Japan
Prior art keywords
layer
diffused
type
turn
time
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1891179A
Other languages
Japanese (ja)
Other versions
JPS6221277B2 (en
Inventor
Yoshiki Hamaguchi
Yutaka Osawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sansha Electric Manufacturing Co Ltd
Original Assignee
Sansha Electric Manufacturing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sansha Electric Manufacturing Co Ltd filed Critical Sansha Electric Manufacturing Co Ltd
Priority to JP1891179A priority Critical patent/JPS55111169A/en
Publication of JPS55111169A publication Critical patent/JPS55111169A/en
Publication of JPS6221277B2 publication Critical patent/JPS6221277B2/ja
Granted legal-status Critical Current

Links

Abstract

PURPOSE: To shorten a turn-off time and reduce a turn-on voltage, by decreasing the thickness of a PE-layer of a thyristor.
CONSTITUTION: Gallium is diffused from both the main faces of an N-type silicon substrate so that an N-type semiconductor layer 6 and P-type diffused layeres 8 are provided. One of the P-type layers 8 is thereafter removed. Phosphorus is selectively diffused into the remaining PB-layer 8 so that an N+-type NE-layer 10 is provided. Gallium is diffused from the main face 12 of the NB-layer 6 and the main faces 14 of the PB-layer 8 and the NE-layer 10 in a short time so that a thin PE-layer 16 of several microns in thickness is produced. At that time, the NE-layer 10 becomes the N+-type but not the P-type. An SiO2 film 18 is coated all over the main faces 14. Gold is diffused from the main face 12 of the NB-layer 6. Since the PE-layer 16 is thin, the gold is diffused to the NB-layer 6 at a low temperature and the turn-off time and turn-on voltage are reduced. When a reverse conducting thyristor is manufactured by this method, the same effect is produced.
COPYRIGHT: (C)1980,JPO&Japio
JP1891179A 1979-02-19 1979-02-19 Method of manufacturing semiconductor device Granted JPS55111169A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1891179A JPS55111169A (en) 1979-02-19 1979-02-19 Method of manufacturing semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1891179A JPS55111169A (en) 1979-02-19 1979-02-19 Method of manufacturing semiconductor device

Publications (2)

Publication Number Publication Date
JPS55111169A true JPS55111169A (en) 1980-08-27
JPS6221277B2 JPS6221277B2 (en) 1987-05-12

Family

ID=11984781

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1891179A Granted JPS55111169A (en) 1979-02-19 1979-02-19 Method of manufacturing semiconductor device

Country Status (1)

Country Link
JP (1) JPS55111169A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63260174A (en) * 1987-04-17 1988-10-27 Sanyo Electric Co Ltd Manufacture of semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63260174A (en) * 1987-04-17 1988-10-27 Sanyo Electric Co Ltd Manufacture of semiconductor device

Also Published As

Publication number Publication date
JPS6221277B2 (en) 1987-05-12

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