JPS55111169A - Method of manufacturing semiconductor device - Google Patents
Method of manufacturing semiconductor deviceInfo
- Publication number
- JPS55111169A JPS55111169A JP1891179A JP1891179A JPS55111169A JP S55111169 A JPS55111169 A JP S55111169A JP 1891179 A JP1891179 A JP 1891179A JP 1891179 A JP1891179 A JP 1891179A JP S55111169 A JPS55111169 A JP S55111169A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- diffused
- type
- turn
- time
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
PURPOSE: To shorten a turn-off time and reduce a turn-on voltage, by decreasing the thickness of a PE-layer of a thyristor.
CONSTITUTION: Gallium is diffused from both the main faces of an N-type silicon substrate so that an N-type semiconductor layer 6 and P-type diffused layeres 8 are provided. One of the P-type layers 8 is thereafter removed. Phosphorus is selectively diffused into the remaining PB-layer 8 so that an N+-type NE-layer 10 is provided. Gallium is diffused from the main face 12 of the NB-layer 6 and the main faces 14 of the PB-layer 8 and the NE-layer 10 in a short time so that a thin PE-layer 16 of several microns in thickness is produced. At that time, the NE-layer 10 becomes the N+-type but not the P-type. An SiO2 film 18 is coated all over the main faces 14. Gold is diffused from the main face 12 of the NB-layer 6. Since the PE-layer 16 is thin, the gold is diffused to the NB-layer 6 at a low temperature and the turn-off time and turn-on voltage are reduced. When a reverse conducting thyristor is manufactured by this method, the same effect is produced.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1891179A JPS55111169A (en) | 1979-02-19 | 1979-02-19 | Method of manufacturing semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1891179A JPS55111169A (en) | 1979-02-19 | 1979-02-19 | Method of manufacturing semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS55111169A true JPS55111169A (en) | 1980-08-27 |
JPS6221277B2 JPS6221277B2 (en) | 1987-05-12 |
Family
ID=11984781
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1891179A Granted JPS55111169A (en) | 1979-02-19 | 1979-02-19 | Method of manufacturing semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS55111169A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63260174A (en) * | 1987-04-17 | 1988-10-27 | Sanyo Electric Co Ltd | Manufacture of semiconductor device |
-
1979
- 1979-02-19 JP JP1891179A patent/JPS55111169A/en active Granted
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63260174A (en) * | 1987-04-17 | 1988-10-27 | Sanyo Electric Co Ltd | Manufacture of semiconductor device |
Also Published As
Publication number | Publication date |
---|---|
JPS6221277B2 (en) | 1987-05-12 |
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