JPS551108A - Mis integrated circuit - Google Patents

Mis integrated circuit

Info

Publication number
JPS551108A
JPS551108A JP7292978A JP7292978A JPS551108A JP S551108 A JPS551108 A JP S551108A JP 7292978 A JP7292978 A JP 7292978A JP 7292978 A JP7292978 A JP 7292978A JP S551108 A JPS551108 A JP S551108A
Authority
JP
Japan
Prior art keywords
oxide film
substrate
produced
semiconductor layer
field
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7292978A
Other languages
Japanese (ja)
Inventor
Yoshiiku Togei
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP7292978A priority Critical patent/JPS551108A/en
Publication of JPS551108A publication Critical patent/JPS551108A/en
Pending legal-status Critical Current

Links

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Element Separation (AREA)

Abstract

PURPOSE: To prevent the deterioration in the boundary state of an oxide film for field, by producing the oxide film at such a thickness that the film does not reach a semiconductor substrate and causing an impurity to creep up to a semiconductor layer located between the substrate and the oxide film so that a channel cut region is produced.
CONSTITUTION: The oxide film 3 for field is produced at such a thickness by thermal oxidation on the surface of the semiconductor layer 2 epitaxially grown on the semiconductor substrate 1 that the oxide film 3 does not reach the substrate 1. The impurity is caused to creep up to the semiconductor layer located between the substrate 1 and the oxide film 3 so that the channel cut region is produced. The deterioration in the boundary state of the oxide film for field can thus be prevented.
COPYRIGHT: (C)1980,JPO&Japio
JP7292978A 1978-06-16 1978-06-16 Mis integrated circuit Pending JPS551108A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7292978A JPS551108A (en) 1978-06-16 1978-06-16 Mis integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7292978A JPS551108A (en) 1978-06-16 1978-06-16 Mis integrated circuit

Publications (1)

Publication Number Publication Date
JPS551108A true JPS551108A (en) 1980-01-07

Family

ID=13503531

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7292978A Pending JPS551108A (en) 1978-06-16 1978-06-16 Mis integrated circuit

Country Status (1)

Country Link
JP (1) JPS551108A (en)

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