JPS5645046A - Semiconductor integrated circuit device and manufacture thereof - Google Patents
Semiconductor integrated circuit device and manufacture thereofInfo
- Publication number
- JPS5645046A JPS5645046A JP12065079A JP12065079A JPS5645046A JP S5645046 A JPS5645046 A JP S5645046A JP 12065079 A JP12065079 A JP 12065079A JP 12065079 A JP12065079 A JP 12065079A JP S5645046 A JPS5645046 A JP S5645046A
- Authority
- JP
- Japan
- Prior art keywords
- layers
- layer
- buried
- narrowed
- epitaxial layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/761—PN junctions
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Bipolar Transistors (AREA)
- Element Separation (AREA)
Abstract
PURPOSE:To attempt the improvement of integrated density by placing a p epitaxial layer on a p type Si substrate provided n<+> buried layers wherein n layers are provided to connect the n layers to the n<+> buried layers and the space between the adjacent layers is made as an isolation layer. CONSTITUTION:n<+> Buried layers 3 are selectively provided on a p type substrate 1 to form a p epitaxial layer 4. Ion implantation is applied by consisting an SiO2 film 5 as a mask and n layers 6, 6' connected to n<+> layers are made by stretching and difussing the ion. Then, a p<+> base 7, an n<+> emitter 8, and an n<+> collector connection layer 9 are made in a normal process. The relation of X2<=b-2e is established when the n layer 6 is made. Where: b is a distance between adjacent layers. e is the thickness of the p expitaxial layer 4. X2 is the width of an isolation layer. Therefore, with the b selected, the X2 will be narrowed to the irreducible minimum of necessity and the distance will be narrowed by the degree of diffusion in a lateral direction. Furthermore, as the n<+> buried layers will upwardly be extended, the depth of the n layer 6 is enough to be less than that of the epitaxial layer 4. So the spread of the n layer 6 in a lateral direction is also not wide. Therefore, the integration will be improved.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12065079A JPS5645046A (en) | 1979-09-21 | 1979-09-21 | Semiconductor integrated circuit device and manufacture thereof |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12065079A JPS5645046A (en) | 1979-09-21 | 1979-09-21 | Semiconductor integrated circuit device and manufacture thereof |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5645046A true JPS5645046A (en) | 1981-04-24 |
Family
ID=14791471
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP12065079A Pending JPS5645046A (en) | 1979-09-21 | 1979-09-21 | Semiconductor integrated circuit device and manufacture thereof |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5645046A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS641310U (en) * | 1987-06-19 | 1989-01-06 |
-
1979
- 1979-09-21 JP JP12065079A patent/JPS5645046A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS641310U (en) * | 1987-06-19 | 1989-01-06 |
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