JPS5645046A - Semiconductor integrated circuit device and manufacture thereof - Google Patents

Semiconductor integrated circuit device and manufacture thereof

Info

Publication number
JPS5645046A
JPS5645046A JP12065079A JP12065079A JPS5645046A JP S5645046 A JPS5645046 A JP S5645046A JP 12065079 A JP12065079 A JP 12065079A JP 12065079 A JP12065079 A JP 12065079A JP S5645046 A JPS5645046 A JP S5645046A
Authority
JP
Japan
Prior art keywords
layers
layer
buried
narrowed
epitaxial layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12065079A
Other languages
Japanese (ja)
Inventor
Masataka Ota
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP12065079A priority Critical patent/JPS5645046A/en
Publication of JPS5645046A publication Critical patent/JPS5645046A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76Making of isolation regions between components
    • H01L21/761PN junctions

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Bipolar Transistors (AREA)
  • Element Separation (AREA)

Abstract

PURPOSE:To attempt the improvement of integrated density by placing a p epitaxial layer on a p type Si substrate provided n<+> buried layers wherein n layers are provided to connect the n layers to the n<+> buried layers and the space between the adjacent layers is made as an isolation layer. CONSTITUTION:n<+> Buried layers 3 are selectively provided on a p type substrate 1 to form a p epitaxial layer 4. Ion implantation is applied by consisting an SiO2 film 5 as a mask and n layers 6, 6' connected to n<+> layers are made by stretching and difussing the ion. Then, a p<+> base 7, an n<+> emitter 8, and an n<+> collector connection layer 9 are made in a normal process. The relation of X2<=b-2e is established when the n layer 6 is made. Where: b is a distance between adjacent layers. e is the thickness of the p expitaxial layer 4. X2 is the width of an isolation layer. Therefore, with the b selected, the X2 will be narrowed to the irreducible minimum of necessity and the distance will be narrowed by the degree of diffusion in a lateral direction. Furthermore, as the n<+> buried layers will upwardly be extended, the depth of the n layer 6 is enough to be less than that of the epitaxial layer 4. So the spread of the n layer 6 in a lateral direction is also not wide. Therefore, the integration will be improved.
JP12065079A 1979-09-21 1979-09-21 Semiconductor integrated circuit device and manufacture thereof Pending JPS5645046A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12065079A JPS5645046A (en) 1979-09-21 1979-09-21 Semiconductor integrated circuit device and manufacture thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12065079A JPS5645046A (en) 1979-09-21 1979-09-21 Semiconductor integrated circuit device and manufacture thereof

Publications (1)

Publication Number Publication Date
JPS5645046A true JPS5645046A (en) 1981-04-24

Family

ID=14791471

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12065079A Pending JPS5645046A (en) 1979-09-21 1979-09-21 Semiconductor integrated circuit device and manufacture thereof

Country Status (1)

Country Link
JP (1) JPS5645046A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS641310U (en) * 1987-06-19 1989-01-06

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS641310U (en) * 1987-06-19 1989-01-06

Similar Documents

Publication Publication Date Title
JPS55128869A (en) Semiconductor device and method of fabricating the same
JPS55160444A (en) Manufacture of semiconductor device
JPS55105344A (en) Semiconductor device
JPS5645046A (en) Semiconductor integrated circuit device and manufacture thereof
JPS5627965A (en) Manufacture of semiconductor device
JPS5642367A (en) Manufacture of bipolar integrated circuit
JPS56142661A (en) Semiconductor integrated circuit and manufacture thereof
JPS5762552A (en) Manufacture of semiconductor device
JPS5698856A (en) Semiconductor resistance device
JPS5649575A (en) Junction type field effect semiconductor
JPS566469A (en) Manufacture of semiconductor device
JPS5472985A (en) Manufacture of integrated-circuit device
JPS5776872A (en) Semiconductor device
JPS5637622A (en) Manufacture of semiconductor device
JPS5522875A (en) Manufacturing method of semiconductor integrated circuit device with lateral transistor
JPS5756966A (en) Manufacture of semiconductor device
JPS54108585A (en) Semiconductor device
JPS5749249A (en) Semiconductor integrated circuit device
JPS5624970A (en) Manufacture of semiconductor device
JPS5317286A (en) Production of semiconductor device
JPS5731153A (en) Manufacture of semiconductor device
JPS56100469A (en) Manufacture of semiconductor device
JPS57199234A (en) Semiconductor integrated circuit device and manufacture thereof
JPS5710966A (en) Manufacture of semiconductor integrated circuit device
JPS5598843A (en) Method of isolating semiconductor integrated circuit