JPS5522875A - Manufacturing method of semiconductor integrated circuit device with lateral transistor - Google Patents
Manufacturing method of semiconductor integrated circuit device with lateral transistorInfo
- Publication number
- JPS5522875A JPS5522875A JP9689578A JP9689578A JPS5522875A JP S5522875 A JPS5522875 A JP S5522875A JP 9689578 A JP9689578 A JP 9689578A JP 9689578 A JP9689578 A JP 9689578A JP S5522875 A JPS5522875 A JP S5522875A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- base layer
- sio
- lateral transistor
- collector
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Bipolar Transistors (AREA)
Abstract
PURPOSE: To improve the various characteristics of a lateral transistor by forming a base layer having a high impurity density, adjacent to a collector layer by implanting an ion or diffusion with an opening provided in an Si3N4 film and further by forming an emitter layer in the base layer by a self-matching with an opening.
CONSTITUTION: An N-epi layer 14 on a P-type substrate 11 is separated by P+ layers 13 and 15. Openings 19 and 20 are provided for the lamination of an SiO2 16 and Si3N4 17 over an N+buried layer 12. An N+base layer 22 is formed by covering selectively with the SiO2 18, and buried under a high temperature condition. Next, the SiO2 18 is removed and a P+ type emitter 23 and a collector 24 are made by self-matching. The N+base layer of a lateral transistor obtained by such a process has a high accuracy and its impurity density becomes higher in the emitter region than in the collector region. Therefore, a resistance rbb is lowered and a BVCEO is increased because of non-occurrence of a punch-through even in the narrow base width. An hFE becomes great and an fT is also raised because an accelerating field may be formed in the base layer.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9689578A JPS5522875A (en) | 1978-08-08 | 1978-08-08 | Manufacturing method of semiconductor integrated circuit device with lateral transistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9689578A JPS5522875A (en) | 1978-08-08 | 1978-08-08 | Manufacturing method of semiconductor integrated circuit device with lateral transistor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5522875A true JPS5522875A (en) | 1980-02-18 |
Family
ID=14177102
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9689578A Pending JPS5522875A (en) | 1978-08-08 | 1978-08-08 | Manufacturing method of semiconductor integrated circuit device with lateral transistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5522875A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7135364B2 (en) | 2001-04-25 | 2006-11-14 | Sanken Electric Co., Ltd. | Method of fabricating semiconductor integrated circuit |
-
1978
- 1978-08-08 JP JP9689578A patent/JPS5522875A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7135364B2 (en) | 2001-04-25 | 2006-11-14 | Sanken Electric Co., Ltd. | Method of fabricating semiconductor integrated circuit |
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