JPS5627965A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5627965A
JPS5627965A JP10424079A JP10424079A JPS5627965A JP S5627965 A JPS5627965 A JP S5627965A JP 10424079 A JP10424079 A JP 10424079A JP 10424079 A JP10424079 A JP 10424079A JP S5627965 A JPS5627965 A JP S5627965A
Authority
JP
Japan
Prior art keywords
type
oxide film
photoresists
emitter
grown
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10424079A
Other languages
Japanese (ja)
Inventor
Yoshihiko Yoshida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP10424079A priority Critical patent/JPS5627965A/en
Publication of JPS5627965A publication Critical patent/JPS5627965A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals

Abstract

PURPOSE:To enable reduction in the depth of a base region forming an emitter without incresing the number of steps of manufacturing a semiconductor device by replacing the sequence of the steps. CONSTITUTION:An N<+> type buried layer 2 and a P type channel stopper 3 are diffused in a P type substrate 1, and an N type epitaxial layer 4 is grown thereon. Then, an oxide film 5 is formed thereon, and polysilicon 6 is grown on the entire surface thereof. Thereafter, thermal oxide film + nitride film 7 are formed thereon, photoresists 8 are formed on the portions which are not the base region, boron ions are subsequently implanted thereto, and the photoresists 8 are removed. With thermal oxide film + nitride film 71, 72 as barriers low density and shallow base junctions 11 are formed thereon. Finally, a P<+> type graft base 14, an emitter 12 and a collector 13 are formed thereon.
JP10424079A 1979-08-15 1979-08-15 Manufacture of semiconductor device Pending JPS5627965A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10424079A JPS5627965A (en) 1979-08-15 1979-08-15 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10424079A JPS5627965A (en) 1979-08-15 1979-08-15 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5627965A true JPS5627965A (en) 1981-03-18

Family

ID=14375425

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10424079A Pending JPS5627965A (en) 1979-08-15 1979-08-15 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5627965A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5693315A (en) * 1979-12-26 1981-07-28 Fujitsu Ltd Manufacture of semiconductor device
JPS577944A (en) * 1980-06-19 1982-01-16 Fujitsu Ltd Semiconductor device and its manufacture
JPS58106865A (en) * 1981-12-19 1983-06-25 Oki Electric Ind Co Ltd Manufacture of semiconductor element
JPS58119668A (en) * 1982-01-11 1983-07-16 Oki Electric Ind Co Ltd Manufacture of semiconductor integrated circuit device
JPS5919373A (en) * 1982-07-23 1984-01-31 Oki Electric Ind Co Ltd Manufacture of semiconductor integrated circuit device
JPS62211949A (en) * 1986-03-13 1987-09-17 Fujitsu Ltd Manufacture of semiconductor device

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5693315A (en) * 1979-12-26 1981-07-28 Fujitsu Ltd Manufacture of semiconductor device
JPS6145392B2 (en) * 1979-12-26 1986-10-07 Fujitsu Ltd
JPS577944A (en) * 1980-06-19 1982-01-16 Fujitsu Ltd Semiconductor device and its manufacture
JPH0159746B2 (en) * 1980-06-19 1989-12-19 Fujitsu Ltd
JPS58106865A (en) * 1981-12-19 1983-06-25 Oki Electric Ind Co Ltd Manufacture of semiconductor element
JPH0128509B2 (en) * 1981-12-19 1989-06-02 Oki Electric Ind Co Ltd
JPS58119668A (en) * 1982-01-11 1983-07-16 Oki Electric Ind Co Ltd Manufacture of semiconductor integrated circuit device
JPH038582B2 (en) * 1982-01-11 1991-02-06 Oki Electric Ind Co Ltd
JPS5919373A (en) * 1982-07-23 1984-01-31 Oki Electric Ind Co Ltd Manufacture of semiconductor integrated circuit device
JPH0239861B2 (en) * 1982-07-23 1990-09-07 Oki Electric Ind Co Ltd
JPS62211949A (en) * 1986-03-13 1987-09-17 Fujitsu Ltd Manufacture of semiconductor device

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