JPS577944A - Semiconductor device and its manufacture - Google Patents

Semiconductor device and its manufacture

Info

Publication number
JPS577944A
JPS577944A JP8328280A JP8328280A JPS577944A JP S577944 A JPS577944 A JP S577944A JP 8328280 A JP8328280 A JP 8328280A JP 8328280 A JP8328280 A JP 8328280A JP S577944 A JPS577944 A JP S577944A
Authority
JP
Japan
Prior art keywords
sio2 film
films
region
film
emitter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8328280A
Other languages
Japanese (ja)
Other versions
JPH0159746B2 (en
Inventor
Hajime Kamioka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP8328280A priority Critical patent/JPS577944A/en
Publication of JPS577944A publication Critical patent/JPS577944A/en
Publication of JPH0159746B2 publication Critical patent/JPH0159746B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Element Separation (AREA)
  • Bipolar Transistors (AREA)

Abstract

PURPOSE:To increase pressure resistance between an emitter and a collector, and facilitate the manufacturing process according to a self-matching method by deeply forming a section contacting with a separating layer of a base region. CONSTITUTION:A polycrystal silicon layer 11, a SiO2 film 12, a Si3N4 film 13 and a SiO2 film 14 are formed successively on an N type silicon epitaxial layer 1 on a P type silicon substrate 10. The SiO2 film 14 is removed selectively, and the films 17, 18, 19 of each forming region of the emitter, a base electrode and a collector electrode are left. Concave sections are made up in the separating region, and oxide films 22 for separation are built up. The Si3N4 film 13 and the SiO2 film 12 are etched using the films 17, 18, 19 as masks, the exposed polycrystal silicon layer 11 is oxidized and a SiO2 film 23 is formed. The films 12, 13 are removed, ions are injected employing a photo-resist 24 as a mask and the base region 25 is made up. An emitter region 28 is built up, and the electrodes 30, 30', 30'' are formed.
JP8328280A 1980-06-19 1980-06-19 Semiconductor device and its manufacture Granted JPS577944A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8328280A JPS577944A (en) 1980-06-19 1980-06-19 Semiconductor device and its manufacture

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8328280A JPS577944A (en) 1980-06-19 1980-06-19 Semiconductor device and its manufacture

Publications (2)

Publication Number Publication Date
JPS577944A true JPS577944A (en) 1982-01-16
JPH0159746B2 JPH0159746B2 (en) 1989-12-19

Family

ID=13798012

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8328280A Granted JPS577944A (en) 1980-06-19 1980-06-19 Semiconductor device and its manufacture

Country Status (1)

Country Link
JP (1) JPS577944A (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5627965A (en) * 1979-08-15 1981-03-18 Nec Corp Manufacture of semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5627965A (en) * 1979-08-15 1981-03-18 Nec Corp Manufacture of semiconductor device

Also Published As

Publication number Publication date
JPH0159746B2 (en) 1989-12-19

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