JPS5776856A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5776856A
JPS5776856A JP15266980A JP15266980A JPS5776856A JP S5776856 A JPS5776856 A JP S5776856A JP 15266980 A JP15266980 A JP 15266980A JP 15266980 A JP15266980 A JP 15266980A JP S5776856 A JPS5776856 A JP S5776856A
Authority
JP
Japan
Prior art keywords
film
si3n4
layer
oxide film
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15266980A
Other languages
Japanese (ja)
Inventor
Hiroshi Nozawa
Hisahiro Matsukawa
Junichi Matsunaga
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP15266980A priority Critical patent/JPS5776856A/en
Publication of JPS5776856A publication Critical patent/JPS5776856A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76264—SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands

Abstract

PURPOSE:To form an element separating film having the small difference of dimensional conversion by selectively oxidizing a material layer, the speed of oxidation thereof is faster than the semiconductor substrate, formed onto the substrate while using Si3N4 as a mask and removing the Si3N4 film and an oxynitride film. CONSTITUTION:A phosphorus doped polycrystal Si layer 13' is shaped onto the P type Si substrate 11 through a terminal oxide film 12, the Si3N4 layer 15 is formed selectively on the surface through a thin oxide film 14, a field oxide film 16 is molded by selectively oxidizing the whole while using the Si3N4 layer 15 as a mask, and the Si3N4 film 15 is removed while the oxynitride layers 16, 17 formed at the end sections of the layer 13' are taken off, and succeeding processes are conducted. Accordingly, the element separating film having few defectes can be shaped while the difference of dimensional conversion can be decreased.
JP15266980A 1980-10-30 1980-10-30 Manufacture of semiconductor device Pending JPS5776856A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15266980A JPS5776856A (en) 1980-10-30 1980-10-30 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15266980A JPS5776856A (en) 1980-10-30 1980-10-30 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5776856A true JPS5776856A (en) 1982-05-14

Family

ID=15545502

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15266980A Pending JPS5776856A (en) 1980-10-30 1980-10-30 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5776856A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0075875A2 (en) * 1981-09-28 1983-04-06 General Electric Company Method of making integrated circuits comprising dielectric isolation regions
JPS58194382A (en) * 1982-05-08 1983-11-12 Matsushita Electric Ind Co Ltd Electrode structure for semiconductor device
US4818235A (en) * 1987-02-10 1989-04-04 Industry Technology Research Institute Isolation structures for integrated circuits
US5002898A (en) * 1989-10-19 1991-03-26 At&T Bell Laboratories Integrated-circuit device isolation
US5338750A (en) * 1992-11-27 1994-08-16 Industrial Technology Research Institute Fabrication method to produce pit-free polysilicon buffer local oxidation isolation
US5432113A (en) * 1992-08-04 1995-07-11 Nippon Steel Corporation Method of making a semiconductor memory device

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0075875A2 (en) * 1981-09-28 1983-04-06 General Electric Company Method of making integrated circuits comprising dielectric isolation regions
JPS58194382A (en) * 1982-05-08 1983-11-12 Matsushita Electric Ind Co Ltd Electrode structure for semiconductor device
JPH0451991B2 (en) * 1982-05-08 1992-08-20 Matsushita Electric Ind Co Ltd
US4818235A (en) * 1987-02-10 1989-04-04 Industry Technology Research Institute Isolation structures for integrated circuits
US5002898A (en) * 1989-10-19 1991-03-26 At&T Bell Laboratories Integrated-circuit device isolation
JPH03145730A (en) * 1989-10-19 1991-06-20 American Teleph & Telegr Co <Att> Manufacture of ic semiconductor device
US5432113A (en) * 1992-08-04 1995-07-11 Nippon Steel Corporation Method of making a semiconductor memory device
US5338750A (en) * 1992-11-27 1994-08-16 Industrial Technology Research Institute Fabrication method to produce pit-free polysilicon buffer local oxidation isolation

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