JPS58194382A - Electrode structure for semiconductor device - Google Patents

Electrode structure for semiconductor device

Info

Publication number
JPS58194382A
JPS58194382A JP57076857A JP7685782A JPS58194382A JP S58194382 A JPS58194382 A JP S58194382A JP 57076857 A JP57076857 A JP 57076857A JP 7685782 A JP7685782 A JP 7685782A JP S58194382 A JPS58194382 A JP S58194382A
Authority
JP
Japan
Prior art keywords
electrode
semiconductor device
frame body
bonding pad
main surface
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57076857A
Other languages
Japanese (ja)
Other versions
JPH0451991B2 (en
Inventor
Yuji Kawasaki
川崎　有二
Takeshi Haneda
羽根田　武志
Tsugio Kawamichi
川路　次男
Hitoshi Haga
均 芳賀
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP57076857A priority Critical patent/JPS58194382A/en
Publication of JPS58194382A publication Critical patent/JPS58194382A/en
Publication of JPH0451991B2 publication Critical patent/JPH0451991B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)

Abstract

PURPOSE:To prevent the generation of plastic deformation by a method wherein a pair of metal electrode material, extending inwards facing each other, are formed in one body with the supporting member which is in parallel and crossed at right angle with said electrode materials, and the inner point part of said metal electrode materials is supported by an insulating frame body in a surrounding manner exposing the main surface. CONSTITUTION:An insulated frame body 6, having a concavity opening upwards, is formed using an electric insulating material and electrode bodies 3 and 4 and a bonding pad part 5 are fixed in such a manner that the main surface will be exposed. According to this constitution, the unsatisfactory plastic deformation generated by external stress can be prevented, and the handling of material is simplified a great deal. Also, after the bonding pad part 5 has been fixed using an electric insulating material and when a light-emitting element chip 8 is placed through the intermediary of a conductive bonding material 7 and an electrode-connection is performed on the above using a fine metal wire 9, the mechanical stabilization and the handling workability thereof can be improved, while in the sealing process, a sealing enclosure can be formed by injecting and hardening light-transmitting epoxy resin 10 into the recess enclosed by an insulating frame body 5, thereby simplifying the seal-mold forming process.

Description

【発明の詳細な説明】 本発明は半導体装置の組立を簡単に行なうことのできる
構造を具備した半導体装置用電極構体に関するものであ
る。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an electrode assembly for a semiconductor device having a structure that allows for easy assembly of the semiconductor device.

従来の発光装置で、発光半導体（以下、発光素子チップ
という）を載置する電極構体は、第１図で示すように、
第１のタイバー１．第２のタイバー２で一対の電極体３
および４の発光素子チップ取付部、いわゆる、ポンディ
ングパッド部５を支えているが、その支えが充分ではな
く特に、ポンディングパッド部６に機械的外部応力が加
わった場合、容易に塑性変形を生じ、実用に耐えない欠
点があった。In a conventional light emitting device, an electrode structure on which a light emitting semiconductor (hereinafter referred to as a light emitting element chip) is placed is, as shown in FIG.
First tie bar 1. A pair of electrode bodies 3 with the second tie bar 2
and 4, which supports the light-emitting element chip mounting portion, the so-called bonding pad portion 5, but the support is insufficient and, in particular, when mechanical external stress is applied to the bonding pad portion 6, it easily deforms plastically. This resulted in a drawback that made it impractical.

本発明は、上述の問題点を解消したもので、要約するに
、相対向して内方に延びる少くとも一対の金属電極体を
、これらに平行および直交する支持体と一体形成し、か
つ、前記金属電極体の内方先端部を、その主面を露出さ
せて絶縁枠体により囲繞固持したことを特徴とする半導
体装置用電極構体を提供するものである。The present invention solves the above-mentioned problems. In summary, at least a pair of metal electrode bodies extending inwardly and facing each other are integrally formed with a support body parallel and orthogonal thereto, and, The present invention provides an electrode assembly for a semiconductor device, characterized in that the inner tip of the metal electrode body is surrounded and fixed by an insulating frame with its main surface exposed.

次に、本発明の半導体装置用電極構体について図面を参
照しつつ実施例にょシ詳しく説明する。Next, examples of the electrode assembly for a semiconductor device of the present invention will be described in detail with reference to the drawings.

発明の実施例に係る半導体装置用電極構体は、第２図に
その斜視図、第３図にそのＡ−Ａ’断面図を示すように
、上方に開口した凹部の絶縁枠体６を、たとえば、成形
樹脂材料、セラミック材料、ガラス無機質材料といった
電気的絶縁材料で形成し、この絶縁枠体６で、電極体３
および４のポンディングパッド部６をその主面が露出す
るようにして、この部分を囲んで固定化せしめる構造と
なっている。すなわち、本実施例の半導体装置用電極構
体では、従来のリードフレームにみられた、ポンディン
グパッド部６に対する外部応力が加わった場合に生ずる
塑性変形の不良発生の問題もなく、取り扱い時にポンデ
ィングパッド部５に外部応力が加わらないよう細心の注
意を払う必要はなく、その取扱いが非常に簡単になる。As shown in FIG. 2 as a perspective view and as shown in FIG. The electrode body 3 is made of an electrically insulating material such as a molded resin material, a ceramic material, or an inorganic glass material.
The main surfaces of the bonding pad portions 6 and 4 are exposed, and this portion is surrounded and fixed. In other words, the electrode assembly for a semiconductor device of this embodiment does not have the problem of plastic deformation defects that occur when external stress is applied to the bonding pad portion 6, which was seen in conventional lead frames, and does not cause bonding during handling. There is no need to take great care not to apply external stress to the pad portion 5, and its handling becomes very simple.

第４図は本発明に係る半導体装置用電極構体を発光ダイ
オードに用いた断面図を示すもので、第１図〜第３図と
同一番号は同一部分を示す。FIG. 4 shows a cross-sectional view of a light emitting diode in which the electrode structure for a semiconductor device according to the present invention is used, and the same numbers as in FIGS. 1 to 3 indicate the same parts.

同図から明らかな様に、実際の半導体装置の組立に際し
ては、ポンディングパッド部５の電気的絶縁材料による
固定化に伴ない、凹部５に導電接着材７を介して半導体
チップ、たとえば発光素子チップ８を載置して、金属細
線９により電極接続する際、機械的安定性と堆扱いの作
業性が飛躍的に向上させることができ、まだ、封止工程
においでは、絶縁枠体６で囲まれた凹部に、たとえば、
透光性エポキシ樹脂１ｏを注入硬化せしめることにより
、封止外囲器の形成ができる。電気的絶縁枠体６の凹部
を封止外囲器の一部として積極的に利用することにより
、封止用成形の工程が簡素化され、経済的に安価な半導
体装置を提供することが可能である。As is clear from the figure, when actually assembling a semiconductor device, as the bonding pad portion 5 is fixed with an electrically insulating material, a semiconductor chip, such as a light emitting element, is inserted into the recess 5 via a conductive adhesive 7. When placing the chip 8 and connecting the electrodes with the thin metal wire 9, the mechanical stability and workability of handling the deposit can be dramatically improved. In an enclosed recess, e.g.
A sealed envelope can be formed by injecting and curing the translucent epoxy resin 1o. By actively utilizing the recessed portion of the electrically insulating frame 6 as a part of the sealing envelope, the sealing molding process is simplified and it is possible to provide an economically inexpensive semiconductor device. It is.

また特に、半導体発光装置に利用する場合、電気的絶縁
材料部に、遮光性でかつ反射効率の良い材料を用いるこ
とにより、絶縁枠体５の開口上方部へのみ有効に光を導
くことができ、下方、側方への光の漏れも防止すること
ができる。In particular, when used in a semiconductor light emitting device, by using a material with light blocking properties and high reflection efficiency for the electrically insulating material part, light can be effectively guided only to the upper part of the opening of the insulating frame 5. It is also possible to prevent light from leaking downward and to the sides.

なお・実施例にお９ては・電気的絶縁枠体とし　　　　
　・。・In Example 9, ・As an electrically insulating frame
・.

て直方体のものを用いたが、安定な形状を有するもので
あれば、これが円柱状あるいは角柱状であってもよい。Although a rectangular parallelepiped was used, it may be cylindrical or prismatic as long as it has a stable shape.

以上説明してきたところから明らかなように、本発明の
半導体装置用電極構体は、従来のリードフレームの塑性
変形に伴なう不都合を排除する効果が奏される。As is clear from the above description, the electrode assembly for a semiconductor device of the present invention is effective in eliminating the disadvantages associated with plastic deformation of conventional lead frames.

【図面の簡単な説明】[Brief explanation of drawings]

第１図は従来のリードフレームの斜視図、第２図は本発
明の実施例に係る半導体装置用電極構体の斜視図、第３
図はその人−ム′の断面図、第４図は本発明に係る半導
体装置用電極構体を発光ダイオードに用いた場合の断面
図である。 １．２・・・・・・支持体、３，４・・・・・・電極体
、５・・・・・・ポンディングパッド部、６・・・・・
・絶縁枠体、７・・・・・・半導体チップ、８・・・・
・・導電接着材、９・・・・・・金属細線、１０・・・
・・・封止樹脂。 代理人の氏名　弁理士　中　尾　敏　男　ほか１名第１
図 第３図FIG. 1 is a perspective view of a conventional lead frame, FIG. 2 is a perspective view of an electrode assembly for a semiconductor device according to an embodiment of the present invention, and FIG.
The figure is a sectional view of the human body, and FIG. 4 is a sectional view of the semiconductor device electrode assembly according to the present invention used in a light emitting diode. 1.2... Support body, 3, 4... Electrode body, 5... Bonding pad part, 6...
- Insulating frame, 7... Semiconductor chip, 8...
...Conductive adhesive, 9...Metal thin wire, 10...
...Sealing resin. Name of agent: Patent attorney Toshio Nakao and 1 other person No. 1
Figure 3

Claims (3)

【特許請求の範囲】[Claims] （１）相対向して内方に延びる少くとも一対の金属電極
体を、これらに平行および直交する支持体と一体形成、
し、かつ、前記金属電極体の内方先端部を、その主面を
露出させて、絶縁枠体により囲繞固持したことを特徴と
する半導体装置用電極構体。(1) At least a pair of metal electrode bodies that face each other and extend inward are integrally formed with a support that is parallel and orthogonal thereto;
An electrode assembly for a semiconductor device, wherein the inner tip of the metal electrode body is surrounded and fixed by an insulating frame with its main surface exposed. （２）金属電極体が絶縁枠体内部の主面に半導体チップ
を載置可能なポンディングパッド部をそなえだことを特
徴とする特許請求の範囲第１項に記載の半導体装置用電
極構体。(2) The electrode assembly for a semiconductor device according to claim 1, wherein the metal electrode body has a bonding pad portion on the main surface inside the insulating frame on which a semiconductor chip can be placed. （３）絶縁枠体は内面反射側壁を有することを特徴とす
る特許請求の範囲第１項又は第２項に記載の半導体装置
用電極構体。(3) The electrode assembly for a semiconductor device according to claim 1 or 2, wherein the insulating frame has an internally reflecting side wall.
JP57076857A 1982-05-08 1982-05-08 Electrode structure for semiconductor device Granted JPS58194382A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57076857A JPS58194382A (en) 1982-05-08 1982-05-08 Electrode structure for semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57076857A JPS58194382A (en) 1982-05-08 1982-05-08 Electrode structure for semiconductor device

Publications (2)

Publication Number Publication Date
JPS58194382A true JPS58194382A (en) 1983-11-12
JPH0451991B2 JPH0451991B2 (en) 1992-08-20

Family

ID=13617318

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57076857A Granted JPS58194382A (en) 1982-05-08 1982-05-08 Electrode structure for semiconductor device

Country Status (1)

Country Link
JP (1) JPS58194382A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0273364A2 (en) * 1986-12-26 1988-07-06 Idec Izumi Corporation Electronic part carrying strip and method of manufacturing the same
US7005311B2 (en) 1993-09-30 2006-02-28 Osram Gmbh Two-pole SMT miniature housing for semiconductor components and method for the manufacture thereof
US7102215B2 (en) 1997-07-29 2006-09-05 Osram Gmbh Surface-mountable light-emitting diode structural element
JP5338899B2 (en) * 2009-03-30 2013-11-13 株式会社オートネットワーク技術研究所 Optical communication module and method for manufacturing optical communication module
JP5338900B2 (en) * 2009-03-30 2013-11-13 株式会社オートネットワーク技術研究所 Optical communication module and method for manufacturing optical communication module

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50104565U (en) * 1974-02-01 1975-08-28
US3914786A (en) * 1974-04-19 1975-10-21 Hewlett Packard Co In-line reflective lead-pair for light-emitting diodes
JPS5338973A (en) * 1976-09-22 1978-04-10 Hitachi Ltd Lead frame
JPS5388575A (en) * 1977-01-13 1978-08-04 Nec Corp Production of lead frame for semiconductor device
JPS53108880U (en) * 1977-02-08 1978-08-31
JPS54165174U (en) * 1978-05-11 1979-11-20
JPS55105388A (en) * 1979-02-07 1980-08-12 Toshiba Corp Manufacture of light emission display device
JPS5776856A (en) * 1980-10-30 1982-05-14 Toshiba Corp Manufacture of semiconductor device
JPS582079A (en) * 1981-06-29 1983-01-07 Nippon Denyo Kk Light emitting diode lamp and manufacture thereof

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50104565U (en) * 1974-02-01 1975-08-28
US3914786A (en) * 1974-04-19 1975-10-21 Hewlett Packard Co In-line reflective lead-pair for light-emitting diodes
JPS5338973A (en) * 1976-09-22 1978-04-10 Hitachi Ltd Lead frame
JPS5388575A (en) * 1977-01-13 1978-08-04 Nec Corp Production of lead frame for semiconductor device
JPS53108880U (en) * 1977-02-08 1978-08-31
JPS54165174U (en) * 1978-05-11 1979-11-20
JPS55105388A (en) * 1979-02-07 1980-08-12 Toshiba Corp Manufacture of light emission display device
JPS5776856A (en) * 1980-10-30 1982-05-14 Toshiba Corp Manufacture of semiconductor device
JPS582079A (en) * 1981-06-29 1983-01-07 Nippon Denyo Kk Light emitting diode lamp and manufacture thereof

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0273364A2 (en) * 1986-12-26 1988-07-06 Idec Izumi Corporation Electronic part carrying strip and method of manufacturing the same
US4937654A (en) * 1986-12-26 1990-06-26 Idec Izumi Corporation Electronic part carrying strip and method of manufacturing the same
US5059373A (en) * 1986-12-26 1991-10-22 Idec Izumi Corporation Method of manufacturing continuous strip of electronic devices
US7005311B2 (en) 1993-09-30 2006-02-28 Osram Gmbh Two-pole SMT miniature housing for semiconductor components and method for the manufacture thereof
US7102212B2 (en) 1993-09-30 2006-09-05 Osram Gmbh Two-pole SMT miniature housing for semiconductor components and method for the manufacture thereof
US7288831B2 (en) 1993-09-30 2007-10-30 Osram Gmbh Two-pole SMT miniature housing for semiconductor components and method for the manufacture thereof
US7102215B2 (en) 1997-07-29 2006-09-05 Osram Gmbh Surface-mountable light-emitting diode structural element
US7183632B2 (en) 1997-07-29 2007-02-27 Osram Gmbh Surface-mountable light-emitting diode structural element
US7508002B2 (en) 1997-07-29 2009-03-24 Osram Gmbh Surface-mountable light-emitting diode structural element
JP5338899B2 (en) * 2009-03-30 2013-11-13 株式会社オートネットワーク技術研究所 Optical communication module and method for manufacturing optical communication module
JP5338900B2 (en) * 2009-03-30 2013-11-13 株式会社オートネットワーク技術研究所 Optical communication module and method for manufacturing optical communication module

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JPH0451991B2 (en) 1992-08-20

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