JPS5797666A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS5797666A JPS5797666A JP17433180A JP17433180A JPS5797666A JP S5797666 A JPS5797666 A JP S5797666A JP 17433180 A JP17433180 A JP 17433180A JP 17433180 A JP17433180 A JP 17433180A JP S5797666 A JPS5797666 A JP S5797666A
- Authority
- JP
- Japan
- Prior art keywords
- emitter
- oxide film
- collector contact
- silicon nitride
- forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 239000004065 semiconductor Substances 0.000 title 1
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 2
- 229920005591 polysilicon Polymers 0.000 abstract 2
- 230000003647 oxidation Effects 0.000 abstract 1
- 238000007254 oxidation reaction Methods 0.000 abstract 1
- 238000000926 separation method Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Bipolar Transistors (AREA)
Abstract
PURPOSE:To obtain a transistor with small base resistance simplifying a production process by forming emitter and collector contact using a silicon nitride film for forming a separation oxide film. CONSTITUTION:A silicon nitride film 25 used as a mask for forming an oxide film 26 separating elements is removed leaving only an emitter and a collector contact part to form the oxide film 29b for separating the emitter and the collector contact part by selective oxidation, the polysilicon 30 and the oxide film 31. Next, the films 31 and 30 are etched so as to be wider than the emitter and the collector contact part about 1mum and are all out oxidized to form the oxide films 35 and 34 at the end part of the polysilicon 30 and at the end part of the emitter. Then the silicon nitride film 25 and the foundation oxide film 24 are removed to form the emitter 36a and the collector contact 36b masked by the oxide film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17433180A JPS5797666A (en) | 1980-12-10 | 1980-12-10 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17433180A JPS5797666A (en) | 1980-12-10 | 1980-12-10 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5797666A true JPS5797666A (en) | 1982-06-17 |
Family
ID=15976765
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17433180A Pending JPS5797666A (en) | 1980-12-10 | 1980-12-10 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5797666A (en) |
-
1980
- 1980-12-10 JP JP17433180A patent/JPS5797666A/en active Pending
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