JPS5591865A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS5591865A JPS5591865A JP16481678A JP16481678A JPS5591865A JP S5591865 A JPS5591865 A JP S5591865A JP 16481678 A JP16481678 A JP 16481678A JP 16481678 A JP16481678 A JP 16481678A JP S5591865 A JPS5591865 A JP S5591865A
- Authority
- JP
- Japan
- Prior art keywords
- region
- heat treatment
- ion injection
- silicon nitride
- forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Bipolar Transistors (AREA)
Abstract
PURPOSE: To reduce the steps in a manufacturing process by making it possible to omit one step of forming a silicon nitride mask for selective oxidation and reducing the time for the heat treatment for forming an impurity region by using ion injection.
CONSTITUTION: Buried-in layer 20 and n-type epitaxial layer 30 are formed on the surface of p-type single crystal silicon substrate 10, and then, silicon nitride film mask 40 is formed. Next, field oxide film 50 is formed selectively. Next, by ion injection, junction type separation region 15 and collector contact region 25 are formed. Subsequently, after performing the heat treatment, resist layer 70 is formed, and by ion injection, external base region 60 and internal base region 65 are formed. Further, by performing the heat treatment, emitter region 80 and each electrode 90 are formed.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16481678A JPS5591865A (en) | 1978-12-28 | 1978-12-28 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16481678A JPS5591865A (en) | 1978-12-28 | 1978-12-28 | Manufacture of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5591865A true JPS5591865A (en) | 1980-07-11 |
Family
ID=15800459
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP16481678A Pending JPS5591865A (en) | 1978-12-28 | 1978-12-28 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5591865A (en) |
-
1978
- 1978-12-28 JP JP16481678A patent/JPS5591865A/en active Pending
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