JPS5591865A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5591865A
JPS5591865A JP16481678A JP16481678A JPS5591865A JP S5591865 A JPS5591865 A JP S5591865A JP 16481678 A JP16481678 A JP 16481678A JP 16481678 A JP16481678 A JP 16481678A JP S5591865 A JPS5591865 A JP S5591865A
Authority
JP
Japan
Prior art keywords
region
heat treatment
ion injection
silicon nitride
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16481678A
Other languages
Japanese (ja)
Inventor
Osamu Hataishi
Minobu Monma
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP16481678A priority Critical patent/JPS5591865A/en
Publication of JPS5591865A publication Critical patent/JPS5591865A/en
Pending legal-status Critical Current

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Landscapes

  • Bipolar Transistors (AREA)

Abstract

PURPOSE: To reduce the steps in a manufacturing process by making it possible to omit one step of forming a silicon nitride mask for selective oxidation and reducing the time for the heat treatment for forming an impurity region by using ion injection.
CONSTITUTION: Buried-in layer 20 and n-type epitaxial layer 30 are formed on the surface of p-type single crystal silicon substrate 10, and then, silicon nitride film mask 40 is formed. Next, field oxide film 50 is formed selectively. Next, by ion injection, junction type separation region 15 and collector contact region 25 are formed. Subsequently, after performing the heat treatment, resist layer 70 is formed, and by ion injection, external base region 60 and internal base region 65 are formed. Further, by performing the heat treatment, emitter region 80 and each electrode 90 are formed.
COPYRIGHT: (C)1980,JPO&Japio
JP16481678A 1978-12-28 1978-12-28 Manufacture of semiconductor device Pending JPS5591865A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16481678A JPS5591865A (en) 1978-12-28 1978-12-28 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16481678A JPS5591865A (en) 1978-12-28 1978-12-28 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5591865A true JPS5591865A (en) 1980-07-11

Family

ID=15800459

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16481678A Pending JPS5591865A (en) 1978-12-28 1978-12-28 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5591865A (en)

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