JPS551113A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS551113A
JPS551113A JP7318578A JP7318578A JPS551113A JP S551113 A JPS551113 A JP S551113A JP 7318578 A JP7318578 A JP 7318578A JP 7318578 A JP7318578 A JP 7318578A JP S551113 A JPS551113 A JP S551113A
Authority
JP
Japan
Prior art keywords
film
polysilicon
mask
produced
crossunder
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7318578A
Other languages
Japanese (ja)
Inventor
Sunao Shibata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP7318578A priority Critical patent/JPS551113A/en
Publication of JPS551113A publication Critical patent/JPS551113A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE:To cross a polysilicon wiring with a crossunder part at will, by removing a prescribed part of an oxidation-resisting film after selective oxidation and introducing an impurity of opposite electroconductive type to a substrate into it. CONSTITUTION:Thick SiO2 film 34 are produced while Si3N4 films 32, 33 are used as masks. The mask 33 and an SiO2 part 35 are then removed. P-diffusion into the p-type silicon substrate is effected so that the crossunder part 36 is produced. The mask 32 and a film 37 are removed. An oxide film 38 for a gate is produced. Polysilicon 39 is grown at a gas phase and selectively etched. The film 38 is etched while the polysilicon 39 is used as a mask. P-diffusion is performed, thereby producing a source-drain layer. The polysilicon wiring 39 becomes the gate electrodes of MOS FET's 40, 41 and intersects a crossover part 36 to electrically connect the gates. Thus, the polysilicon wiring can be crossed with the crossover part at will to increase the degree of freedom of a design and the degree of integration.
JP7318578A 1978-06-19 1978-06-19 Manufacture of semiconductor device Pending JPS551113A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7318578A JPS551113A (en) 1978-06-19 1978-06-19 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7318578A JPS551113A (en) 1978-06-19 1978-06-19 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS551113A true JPS551113A (en) 1980-01-07

Family

ID=13510816

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7318578A Pending JPS551113A (en) 1978-06-19 1978-06-19 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS551113A (en)

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