JPS5619653A - Bipolar cmos semiconductor device and manufacture thereof - Google Patents

Bipolar cmos semiconductor device and manufacture thereof

Info

Publication number
JPS5619653A
JPS5619653A JP9501079A JP9501079A JPS5619653A JP S5619653 A JPS5619653 A JP S5619653A JP 9501079 A JP9501079 A JP 9501079A JP 9501079 A JP9501079 A JP 9501079A JP S5619653 A JPS5619653 A JP S5619653A
Authority
JP
Japan
Prior art keywords
region
layer
type
well
type well
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9501079A
Other languages
Japanese (ja)
Inventor
Noboru Horie
Toshihiro Matsuda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP9501079A priority Critical patent/JPS5619653A/en
Publication of JPS5619653A publication Critical patent/JPS5619653A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
    • H01L27/0623—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with bipolar transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Bipolar Transistors (AREA)
  • Element Separation (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To easily manufacture and to obtain the semiconductor device having a wide scope of application by a method wherein a P-well and an isolated region are formed simultaneously when forming the bipolar CMOS. CONSTITUTION:An n<+>-type buried region 12 is provided on a p-type Si substrate 11, an n<->-type layer 13 is epitaxially grown on the whole surface including the region 12, it is positioned above the region 12 by performing an ion injection and a p-type well 15 is formed in the layer 13. At the same time, a p<->-type well 14 having a depth reaching the substrate 11 is provided and the layer 13 is divided into two island regions. The side where the region 12 is included is used for the bipolar and the other side is used for the MOS. Then, a contact region 16 to be located in the p<+>-type well 15, a guard ring 17 to be located on the boundary of the well and the layer 13, and a source region 18 to be located in the other layer 13 are formed by performing a simultaneous diffusion. Subsequently, an emitter region 20 to be located in the n<+>-type well 15, a collector contact region 21 to be located in the layer 13 on the same side as the region 20, a drain region 22, a source region 23 and a gurad ring 23, to be located in the other layer 13, are provided by performing a sumultaneous diffusion in the same way as above.
JP9501079A 1979-07-27 1979-07-27 Bipolar cmos semiconductor device and manufacture thereof Pending JPS5619653A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9501079A JPS5619653A (en) 1979-07-27 1979-07-27 Bipolar cmos semiconductor device and manufacture thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9501079A JPS5619653A (en) 1979-07-27 1979-07-27 Bipolar cmos semiconductor device and manufacture thereof

Publications (1)

Publication Number Publication Date
JPS5619653A true JPS5619653A (en) 1981-02-24

Family

ID=14125967

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9501079A Pending JPS5619653A (en) 1979-07-27 1979-07-27 Bipolar cmos semiconductor device and manufacture thereof

Country Status (1)

Country Link
JP (1) JPS5619653A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61124165A (en) * 1984-11-20 1986-06-11 Matsushita Electronics Corp Manufacture of semiconductor device
JPS6230372A (en) * 1985-04-19 1987-02-09 Sanyo Electric Co Ltd Manufacture of semiconductor integrated circuit
JPS63232365A (en) * 1987-03-20 1988-09-28 Fujitsu Ltd Manufacture of bipolar cmis device
GB2561388A (en) * 2017-04-13 2018-10-17 Raytheon Systems Ltd Silicon carbide integrated circuit
US10665703B2 (en) 2017-04-13 2020-05-26 Raytheon Systems Limited Silicon carbide transistor

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5128517A (en) * 1974-09-03 1976-03-10 Nippon Kokan Kk
JPS54131887A (en) * 1978-04-04 1979-10-13 Oki Electric Ind Co Ltd Manufacture of bipolar cmos-type integrated circuit

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5128517A (en) * 1974-09-03 1976-03-10 Nippon Kokan Kk
JPS54131887A (en) * 1978-04-04 1979-10-13 Oki Electric Ind Co Ltd Manufacture of bipolar cmos-type integrated circuit

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61124165A (en) * 1984-11-20 1986-06-11 Matsushita Electronics Corp Manufacture of semiconductor device
JPS6230372A (en) * 1985-04-19 1987-02-09 Sanyo Electric Co Ltd Manufacture of semiconductor integrated circuit
JPS63232365A (en) * 1987-03-20 1988-09-28 Fujitsu Ltd Manufacture of bipolar cmis device
GB2561388A (en) * 2017-04-13 2018-10-17 Raytheon Systems Ltd Silicon carbide integrated circuit
GB2561388B (en) * 2017-04-13 2019-11-06 Raytheon Systems Ltd Silicon carbide integrated circuit
US10665703B2 (en) 2017-04-13 2020-05-26 Raytheon Systems Limited Silicon carbide transistor
US11450568B2 (en) 2017-04-13 2022-09-20 Raytheon Systems Limited Silicon carbide integrated circuit
US11626325B2 (en) 2017-04-13 2023-04-11 Raytheon Systems Limited Method of making a silicon carbide integrated circuit

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