JPS6418219A - Manufacture of trench-type memory cell - Google Patents

Manufacture of trench-type memory cell

Info

Publication number
JPS6418219A
JPS6418219A JP62173791A JP17379187A JPS6418219A JP S6418219 A JPS6418219 A JP S6418219A JP 62173791 A JP62173791 A JP 62173791A JP 17379187 A JP17379187 A JP 17379187A JP S6418219 A JPS6418219 A JP S6418219A
Authority
JP
Japan
Prior art keywords
trench
glass layer
doped
based glass
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62173791A
Other languages
Japanese (ja)
Inventor
Yoshiharu Hidaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp
Priority to JP62173791A priority Critical patent/JPS6418219A/en
Publication of JPS6418219A publication Critical patent/JPS6418219A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To easily form an impurity diffusion layer of more than a definite concentration value by a method wherein a two-layer structure composed of an Si-based glass layer doped with a dopant and another Si-based glass layer formed on its upper part and not doped with the dopant is formed inside a trench formed in a semiconductor substrate and an annealing operation is executed. CONSTITUTION:A trench 5 is formed in a single-crystal silicon substrate 3 by a dry-etching operation by making use of SiO2 by a CVD method as a mask 4. After that, an As-doped Si-based glass layer 1 is formed inside the trench 5; an SiO2 film 2 is formed on the glass layer 1 by the CVD method; after that, an annealing heat-treatment is executed. By this setup, it is possible to obtain an impurity diffusion layer whose concentration is 2.5 times higher than that of a case where only the Si-doped Si-based glass layer 1 is formed and annealed.
JP62173791A 1987-07-14 1987-07-14 Manufacture of trench-type memory cell Pending JPS6418219A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62173791A JPS6418219A (en) 1987-07-14 1987-07-14 Manufacture of trench-type memory cell

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62173791A JPS6418219A (en) 1987-07-14 1987-07-14 Manufacture of trench-type memory cell

Publications (1)

Publication Number Publication Date
JPS6418219A true JPS6418219A (en) 1989-01-23

Family

ID=15967220

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62173791A Pending JPS6418219A (en) 1987-07-14 1987-07-14 Manufacture of trench-type memory cell

Country Status (1)

Country Link
JP (1) JPS6418219A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04105169U (en) * 1991-01-25 1992-09-10 東陶機器株式会社 Automatic toilet bowl cleaning device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04105169U (en) * 1991-01-25 1992-09-10 東陶機器株式会社 Automatic toilet bowl cleaning device

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