JPS5723262A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5723262A
JPS5723262A JP9788480A JP9788480A JPS5723262A JP S5723262 A JPS5723262 A JP S5723262A JP 9788480 A JP9788480 A JP 9788480A JP 9788480 A JP9788480 A JP 9788480A JP S5723262 A JPS5723262 A JP S5723262A
Authority
JP
Japan
Prior art keywords
region
window
diffusion
widened
impurities
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9788480A
Other languages
Japanese (ja)
Inventor
Masaaki Sadamori
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP9788480A priority Critical patent/JPS5723262A/en
Publication of JPS5723262A publication Critical patent/JPS5723262A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Transistors (AREA)

Abstract

PURPOSE:To make a planar element high in reverse dielectric strength without any damage to the forward characteristic, by method wherein a junction forming process is performed, after diffusion of the impurities from a window of the fixed size, while the window region is widened in the circumferential direction with the diffusion of the impurities with lowered concentration added thereto. CONSTITUTION:For instance, in the process of selective diffusion of a planar type diode, a window 4 having a given size is opened in an oxide film 3 provided on an N<-> substrate 1 to form a P<+> diffusion layer 5. Subsequently, the window 4 is widened up to 4a to diffuse the impurities with the lower concentration than the time of forming the diffusion layer 5 shallower than the region 5a to form the P<+> region 5a. Further the window 4a is widened up to 4b to diffuse the P<+> region 5b with the lower concentration of the region 5a. The toral hours of these diffusions are made to be those hours wherein the diffusion layer 5 is formed to the required depth. Thereby, the effective radius of curvature of junction to be formed can be reduced, and also a depletion layer can be easily extended also to the P<+> region 5b near the surface thus to heighten the reverse dielectric strength without increasing power loss in the forward direction.
JP9788480A 1980-07-16 1980-07-16 Manufacture of semiconductor device Pending JPS5723262A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9788480A JPS5723262A (en) 1980-07-16 1980-07-16 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9788480A JPS5723262A (en) 1980-07-16 1980-07-16 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5723262A true JPS5723262A (en) 1982-02-06

Family

ID=14204170

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9788480A Pending JPS5723262A (en) 1980-07-16 1980-07-16 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5723262A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58166891U (en) * 1982-05-04 1983-11-07 日本電子機器株式会社 cleaning equipment
JPS58191464A (en) * 1982-04-30 1983-11-08 Matsushita Electric Works Ltd Manufacture of semiconductor device
US5188039A (en) * 1990-08-29 1993-02-23 Hitachi, Ltd. Method of fixing inside panel of car and structure for fixing the same

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54101278A (en) * 1978-01-26 1979-08-09 Nec Corp Manufacture for semiconductor device
JPS54102876A (en) * 1978-01-30 1979-08-13 Mitsubishi Electric Corp Manufacture for planer type semiconductor device
JPS55115328A (en) * 1979-02-28 1980-09-05 Toshiba Corp Manufacturing method of semiconductor element

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54101278A (en) * 1978-01-26 1979-08-09 Nec Corp Manufacture for semiconductor device
JPS54102876A (en) * 1978-01-30 1979-08-13 Mitsubishi Electric Corp Manufacture for planer type semiconductor device
JPS55115328A (en) * 1979-02-28 1980-09-05 Toshiba Corp Manufacturing method of semiconductor element

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58191464A (en) * 1982-04-30 1983-11-08 Matsushita Electric Works Ltd Manufacture of semiconductor device
JPS58166891U (en) * 1982-05-04 1983-11-07 日本電子機器株式会社 cleaning equipment
US5188039A (en) * 1990-08-29 1993-02-23 Hitachi, Ltd. Method of fixing inside panel of car and structure for fixing the same

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