JPS5511307A - Method of manufacturing semiconductor integrated circuit - Google Patents
Method of manufacturing semiconductor integrated circuitInfo
- Publication number
- JPS5511307A JPS5511307A JP8292878A JP8292878A JPS5511307A JP S5511307 A JPS5511307 A JP S5511307A JP 8292878 A JP8292878 A JP 8292878A JP 8292878 A JP8292878 A JP 8292878A JP S5511307 A JPS5511307 A JP S5511307A
- Authority
- JP
- Japan
- Prior art keywords
- phosphorus
- base
- entire surface
- oxide film
- diffused
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE: To reduce gate leakage and improve gate insulation breakdown voltage, by heat treating phosphorus-silicic-acid glass which is piled on the entire surface of a base as intermediate insulating film, diffusing its phosphorus component into the base, and forming a source drain layer of the desired junction depth.
CONSTITUTION: Field oxide film 2, gate oxide film 3 and polycrystalline Si electrode 4 are formed on P-type Si base. After this, phosphorus is diffused on its entire surface and electrode 4 is given conducting property. At the same time, a shallow source drain diffused layer 6 is formed by phosphorus which has passed through oxide film 3. After this, phosphorus-silicic-acid glass PSG is piled as intermediate insulating film over its entire surface and subjected to heat treatment. Thus, its phosphrus component is diffused into base 1 and a source drain layer of the desired junction depth is formed. By this, it is possible to prevent the occurrence of a hollow in the gate side edge, to reduce gate leakage and improve gate insulation breakdown voltage.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8292878A JPS5511307A (en) | 1978-07-10 | 1978-07-10 | Method of manufacturing semiconductor integrated circuit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8292878A JPS5511307A (en) | 1978-07-10 | 1978-07-10 | Method of manufacturing semiconductor integrated circuit |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5511307A true JPS5511307A (en) | 1980-01-26 |
Family
ID=13787884
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP8292878A Pending JPS5511307A (en) | 1978-07-10 | 1978-07-10 | Method of manufacturing semiconductor integrated circuit |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5511307A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04248974A (en) * | 1991-01-30 | 1992-09-04 | Jiro Ishikawa | Production of healthy tea comprising adlay as main raw material |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS50134777A (en) * | 1974-04-15 | 1975-10-25 |
-
1978
- 1978-07-10 JP JP8292878A patent/JPS5511307A/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS50134777A (en) * | 1974-04-15 | 1975-10-25 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04248974A (en) * | 1991-01-30 | 1992-09-04 | Jiro Ishikawa | Production of healthy tea comprising adlay as main raw material |
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