JPS5511307A - Method of manufacturing semiconductor integrated circuit - Google Patents

Method of manufacturing semiconductor integrated circuit

Info

Publication number
JPS5511307A
JPS5511307A JP8292878A JP8292878A JPS5511307A JP S5511307 A JPS5511307 A JP S5511307A JP 8292878 A JP8292878 A JP 8292878A JP 8292878 A JP8292878 A JP 8292878A JP S5511307 A JPS5511307 A JP S5511307A
Authority
JP
Japan
Prior art keywords
phosphorus
base
entire surface
oxide film
diffused
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8292878A
Other languages
Japanese (ja)
Inventor
Tadashi Mori
Masayoshi Ino
Akihisa Aoki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oki Electric Industry Co Ltd
Original Assignee
Oki Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oki Electric Industry Co Ltd filed Critical Oki Electric Industry Co Ltd
Priority to JP8292878A priority Critical patent/JPS5511307A/en
Publication of JPS5511307A publication Critical patent/JPS5511307A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To reduce gate leakage and improve gate insulation breakdown voltage, by heat treating phosphorus-silicic-acid glass which is piled on the entire surface of a base as intermediate insulating film, diffusing its phosphorus component into the base, and forming a source drain layer of the desired junction depth.
CONSTITUTION: Field oxide film 2, gate oxide film 3 and polycrystalline Si electrode 4 are formed on P-type Si base. After this, phosphorus is diffused on its entire surface and electrode 4 is given conducting property. At the same time, a shallow source drain diffused layer 6 is formed by phosphorus which has passed through oxide film 3. After this, phosphorus-silicic-acid glass PSG is piled as intermediate insulating film over its entire surface and subjected to heat treatment. Thus, its phosphrus component is diffused into base 1 and a source drain layer of the desired junction depth is formed. By this, it is possible to prevent the occurrence of a hollow in the gate side edge, to reduce gate leakage and improve gate insulation breakdown voltage.
COPYRIGHT: (C)1980,JPO&Japio
JP8292878A 1978-07-10 1978-07-10 Method of manufacturing semiconductor integrated circuit Pending JPS5511307A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8292878A JPS5511307A (en) 1978-07-10 1978-07-10 Method of manufacturing semiconductor integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8292878A JPS5511307A (en) 1978-07-10 1978-07-10 Method of manufacturing semiconductor integrated circuit

Publications (1)

Publication Number Publication Date
JPS5511307A true JPS5511307A (en) 1980-01-26

Family

ID=13787884

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8292878A Pending JPS5511307A (en) 1978-07-10 1978-07-10 Method of manufacturing semiconductor integrated circuit

Country Status (1)

Country Link
JP (1) JPS5511307A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04248974A (en) * 1991-01-30 1992-09-04 Jiro Ishikawa Production of healthy tea comprising adlay as main raw material

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50134777A (en) * 1974-04-15 1975-10-25

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50134777A (en) * 1974-04-15 1975-10-25

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04248974A (en) * 1991-01-30 1992-09-04 Jiro Ishikawa Production of healthy tea comprising adlay as main raw material

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