JPS57194546A - Semiconductor device and manufacture thereof - Google Patents

Semiconductor device and manufacture thereof

Info

Publication number
JPS57194546A
JPS57194546A JP7917181A JP7917181A JPS57194546A JP S57194546 A JPS57194546 A JP S57194546A JP 7917181 A JP7917181 A JP 7917181A JP 7917181 A JP7917181 A JP 7917181A JP S57194546 A JPS57194546 A JP S57194546A
Authority
JP
Japan
Prior art keywords
region
single crystal
polycrystalline
substrate
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7917181A
Other languages
Japanese (ja)
Inventor
Masayuki Hashimoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Faurecia Clarion Electronics Co Ltd
Original Assignee
Clarion Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Clarion Co Ltd filed Critical Clarion Co Ltd
Priority to JP7917181A priority Critical patent/JPS57194546A/en
Publication of JPS57194546A publication Critical patent/JPS57194546A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/763—Polycrystalline semiconductor regions

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Bipolar Transistors (AREA)
  • Element Separation (AREA)

Abstract

PURPOSE:To enable to form a deep diffusion layer by performing a short-time heat treatment by a method wherein a polycrystalline semiconductor region is formed in advance on the spot requiring a deep diffusion processing, and the characteristics of the polycrystalline semiconductor, having a larger impurity diffusion coefficient than a single crystal semiconductor, is utilized. CONSTITUTION:A buried diffusion region 2 is formed on a single crystal Si substrate 1, and a polycrystalline Si patterns 12A and 12B are formed on the region which comes in contact with the above region 2 and the region on the substrate which will be used as an isolation region. Then, when an epitaxial layer is formed on the whole surface, polycrystalline Si patterns 12A and 12B, and a single crystal layer 3 is formed on the other region. When the impurities, which are reverse conductive type to the single crystal layer 3 located around the polycrystalline layers 13A and 13B, are doped from the surface of the epitaxial layer, they are easily and uniformly diffused as far as to the single crystal substrate, and they are turned into a contact region 13B and an isolation region 13A respectively.
JP7917181A 1981-05-27 1981-05-27 Semiconductor device and manufacture thereof Pending JPS57194546A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7917181A JPS57194546A (en) 1981-05-27 1981-05-27 Semiconductor device and manufacture thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7917181A JPS57194546A (en) 1981-05-27 1981-05-27 Semiconductor device and manufacture thereof

Publications (1)

Publication Number Publication Date
JPS57194546A true JPS57194546A (en) 1982-11-30

Family

ID=13682521

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7917181A Pending JPS57194546A (en) 1981-05-27 1981-05-27 Semiconductor device and manufacture thereof

Country Status (1)

Country Link
JP (1) JPS57194546A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002222938A (en) * 2001-01-25 2002-08-09 Rohm Co Ltd Semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002222938A (en) * 2001-01-25 2002-08-09 Rohm Co Ltd Semiconductor device

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