JPS5612782A - Manufacture of solar battery - Google Patents

Manufacture of solar battery

Info

Publication number
JPS5612782A
JPS5612782A JP8858279A JP8858279A JPS5612782A JP S5612782 A JPS5612782 A JP S5612782A JP 8858279 A JP8858279 A JP 8858279A JP 8858279 A JP8858279 A JP 8858279A JP S5612782 A JPS5612782 A JP S5612782A
Authority
JP
Japan
Prior art keywords
diffusion layer
electrode
main surface
impurity
treatment process
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8858279A
Other languages
Japanese (ja)
Inventor
Hiroyuki Kitamura
Akira Hanabusa
Yutaro Kita
Mikio Murozono
Motonori Mochizuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP8858279A priority Critical patent/JPS5612782A/en
Publication of JPS5612782A publication Critical patent/JPS5612782A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells

Landscapes

  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Sustainable Development (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photovoltaic Devices (AREA)

Abstract

PURPOSE:To improve the sensitivity of short wave length and to prevent an increase in leakage current as well by forming an impurity diffusion layer so that a shallow part and a deep part may alternately locate on the main surface of a semiconductor substrate wherein an electrode is provided at the deep part of the diffusion layer. CONSTITUTION:A diffusion layer 23 is formed by selectively and insularly or beltlikely diffusing an impurity, for example, boron which can become acceptor from the main surface of an N-type silicon semiconductor 21. Wherein, the above is done at the first thermal treatment process. Next, a new diffusion layer 24 is formed by connecting the insular or beltlike diffusion layer 23 by the second thermal treatment process. Furthermore, a reflection preventive film 25 is formed by performing annealing treatment in oxide atmosphere. Finally, an electrode 26 is formed at a part of the diffusion layer 23.
JP8858279A 1979-07-11 1979-07-11 Manufacture of solar battery Pending JPS5612782A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8858279A JPS5612782A (en) 1979-07-11 1979-07-11 Manufacture of solar battery

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8858279A JPS5612782A (en) 1979-07-11 1979-07-11 Manufacture of solar battery

Publications (1)

Publication Number Publication Date
JPS5612782A true JPS5612782A (en) 1981-02-07

Family

ID=13946831

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8858279A Pending JPS5612782A (en) 1979-07-11 1979-07-11 Manufacture of solar battery

Country Status (1)

Country Link
JP (1) JPS5612782A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL1012961C2 (en) * 1999-09-02 2001-03-05 Stichting Energie A method of manufacturing a semiconductor device.

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5111584A (en) * 1974-07-19 1976-01-29 Matsushita Electric Ind Co Ltd

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5111584A (en) * 1974-07-19 1976-01-29 Matsushita Electric Ind Co Ltd

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL1012961C2 (en) * 1999-09-02 2001-03-05 Stichting Energie A method of manufacturing a semiconductor device.
WO2001024279A1 (en) * 1999-09-02 2001-04-05 Stichting Energieonderzoek Centrum Nederland Method for the production of a semiconductor device
US6756290B1 (en) 1999-09-02 2004-06-29 Stichting Energieonderzoek Centrum Nederland Method for the production of a semiconductor device

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