JPS5627923A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5627923A
JPS5627923A JP10386179A JP10386179A JPS5627923A JP S5627923 A JPS5627923 A JP S5627923A JP 10386179 A JP10386179 A JP 10386179A JP 10386179 A JP10386179 A JP 10386179A JP S5627923 A JPS5627923 A JP S5627923A
Authority
JP
Japan
Prior art keywords
impurity
electrode
melting point
high melting
metal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10386179A
Other languages
Japanese (ja)
Inventor
Nobuo Toyokura
Hajime Ishikawa
Shinichi Inoue
Hiroshi Horie
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP10386179A priority Critical patent/JPS5627923A/en
Publication of JPS5627923A publication Critical patent/JPS5627923A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body

Abstract

PURPOSE:To simplify the manufacturing process of a semiconductor device by unifying the diffusion process and the electrode wiring process by a method wherein a metal containing an impurity having a high melting point is adhered to a semiconductor substrate covering an opening formed on the substrate, the impurity is made to diffuse by heat treatment and the metal having a high melting point is processed by patterning. CONSTITUTION:An SiO2 film 2 is formed on a P type semiconductor wafer 1, etc., and an opening 3 is formed in it. A metal having a high melting point, for example Mo, containing an impurity, for example phosphorus, is adhered on it and an electrode 8 is formed by patterning. Then the impurity is made to diffuse in the substrate by heat treatment in nitrogen atmosphere to form an N type diffusion layer 9. At the same time, an ohmic contact is formed between the electrode 8 and the diffusion layer 9 to complete a diode. By this method, the necessity of precise location in the formation of electrode can be eliminated to simplify the process. This method can be utilized for the manufacture of an MOS transistor or a J-FET.
JP10386179A 1979-08-15 1979-08-15 Manufacture of semiconductor device Pending JPS5627923A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10386179A JPS5627923A (en) 1979-08-15 1979-08-15 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10386179A JPS5627923A (en) 1979-08-15 1979-08-15 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5627923A true JPS5627923A (en) 1981-03-18

Family

ID=14365224

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10386179A Pending JPS5627923A (en) 1979-08-15 1979-08-15 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5627923A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60236257A (en) * 1984-05-09 1985-11-25 Matsushita Electric Ind Co Ltd Semiconductor device
JP2005079232A (en) * 2003-08-29 2005-03-24 Shindengen Electric Mfg Co Ltd High-speed switching diode and its manufacturing method

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60236257A (en) * 1984-05-09 1985-11-25 Matsushita Electric Ind Co Ltd Semiconductor device
JP2005079232A (en) * 2003-08-29 2005-03-24 Shindengen Electric Mfg Co Ltd High-speed switching diode and its manufacturing method

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