JPS56135971A - Manufacture of mos type semiconductor device - Google Patents

Manufacture of mos type semiconductor device

Info

Publication number
JPS56135971A
JPS56135971A JP4008080A JP4008080A JPS56135971A JP S56135971 A JPS56135971 A JP S56135971A JP 4008080 A JP4008080 A JP 4008080A JP 4008080 A JP4008080 A JP 4008080A JP S56135971 A JPS56135971 A JP S56135971A
Authority
JP
Japan
Prior art keywords
oxide film
gate
lead
film
out electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4008080A
Other languages
Japanese (ja)
Inventor
Takanari Tsujimaru
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
Original Assignee
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CHIYOU LSI GIJUTSU KENKYU KUMIAI, CHO LSI GIJUTSU KENKYU KUMIAI filed Critical CHIYOU LSI GIJUTSU KENKYU KUMIAI
Priority to JP4008080A priority Critical patent/JPS56135971A/en
Publication of JPS56135971A publication Critical patent/JPS56135971A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)

Abstract

PURPOSE:To form a gate lead-out electrode and improve a yield while contriving to make a transistor size small by a method wherein the gate electrode is protected by a thin oxide film and a nitrided silicon film. CONSTITUTION:Prescribed regions of a P type semiconductor substrate 1 is formed with a field oxide film 2 and further, with a gate oxide film 3 and the gate electrode 4. Then, a source region 5 and a drain region 6 are formed by an ion-implantation. Then, the thin oxide film 7 and the nitrided silicon film 8 are formed. Thereafter, a thick oxide film 9 is formed, contact holes 10-12 being opened and the oxide film 9 being made to a mask to remove the nitrided silicon film 8. Subsequently, a source lead-out electrode 13, a drain lead-out electrode 14 and the gate lead-out electrode 17 are formed and on those surfaces is formed a protecting film 15.
JP4008080A 1980-03-28 1980-03-28 Manufacture of mos type semiconductor device Pending JPS56135971A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4008080A JPS56135971A (en) 1980-03-28 1980-03-28 Manufacture of mos type semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4008080A JPS56135971A (en) 1980-03-28 1980-03-28 Manufacture of mos type semiconductor device

Publications (1)

Publication Number Publication Date
JPS56135971A true JPS56135971A (en) 1981-10-23

Family

ID=12570922

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4008080A Pending JPS56135971A (en) 1980-03-28 1980-03-28 Manufacture of mos type semiconductor device

Country Status (1)

Country Link
JP (1) JPS56135971A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6284638B1 (en) * 1992-12-08 2001-09-04 Fujitsu Limited Manufacturing method of a semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6284638B1 (en) * 1992-12-08 2001-09-04 Fujitsu Limited Manufacturing method of a semiconductor device

Similar Documents

Publication Publication Date Title
GB1529297A (en) Self-aligned cmos process for bulk silicon device
GB1481049A (en) Fabrication of field effect transistors
JPS5578574A (en) Manufacture of insulated-gate field-effect transistor
JPS56155531A (en) Manufacture of semiconductor device
JPS56135971A (en) Manufacture of mos type semiconductor device
JPS577972A (en) Insulated gate type thin film transistor
JPS57107067A (en) Manufacture of semiconductor device
JPS55130170A (en) Semiconductor device and method of fabricating the same
JPS5538019A (en) Manufacturing of semiconductor device
JPS6489457A (en) Manufacture of semiconductor device
JPS5591873A (en) Manufacture of semiconductor device
JPS55107229A (en) Method of manufacturing semiconductor device
JPS5773974A (en) Manufacture of most type semiconductor device
JPS561572A (en) Manufacture of semiconductor device
JPS572579A (en) Manufacture of junction type field effect transistor
JPS5530867A (en) Method of making semiconductor device
JPS56147447A (en) Manufacture of mosic
JPS54134579A (en) Mis semiconductor device
JPS5789257A (en) Manufacture of insulation gate type field effect transistor
JPS56115570A (en) Manufacture of semiconductor device
JPS57201080A (en) Semiconductor device
JPS57153462A (en) Manufacture of semiconductor integrated circuit device
JPS577967A (en) Structure of mos transistor and manufacture thereof
JPS54104782A (en) Mos type semiconductor device
JPS5769780A (en) High withstand voltage mos transistor