JPS56153757A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS56153757A
JPS56153757A JP5739380A JP5739380A JPS56153757A JP S56153757 A JPS56153757 A JP S56153757A JP 5739380 A JP5739380 A JP 5739380A JP 5739380 A JP5739380 A JP 5739380A JP S56153757 A JPS56153757 A JP S56153757A
Authority
JP
Japan
Prior art keywords
poly
metal
film
mask
thin film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP5739380A
Other languages
Japanese (ja)
Other versions
JPS6346987B2 (en
Inventor
Norio Kususe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP5739380A priority Critical patent/JPS56153757A/en
Publication of JPS56153757A publication Critical patent/JPS56153757A/en
Publication of JPS6346987B2 publication Critical patent/JPS6346987B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE:To obtain a high speed transistor wherein a metal semiconductor diode is incorporated by providing the metal-semiconductor diode comprising a poly Si thin film in the device having poly Si thin film electrodes separated by a selective oxide layer. CONSTITUTION:For example, in the process of forming an NPN type transistor, hole parts are provided in an oxide film 105, and a P type base 102 is provided on the surface of an N type substrate 101. Then, a poly Si thin film is deposited, this film is selectively oxidized by a nitride film mask 110, and the poly Si electrode parts 111-114 are formed. Then, a mask 110 on the poly Si 113, 112, and 111 are sequentially removed. Thermal diffusion is performed. A base connecting region, an emitter 103, and a collector connecting region are formed. Then, the mask (and the oxide film on the other poly Si) on the poly Si 114 is removed, e.g., platinum silicide 117 is formed on the poly Si, and the metal-semiconductor diode (and ohmic contact) are obtained. Then, by providing Al connecting wiring 119, the transistor wherein the metal-semiconductor is incorporated can be obtained.
JP5739380A 1980-04-30 1980-04-30 Semiconductor device Granted JPS56153757A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5739380A JPS56153757A (en) 1980-04-30 1980-04-30 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5739380A JPS56153757A (en) 1980-04-30 1980-04-30 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS56153757A true JPS56153757A (en) 1981-11-27
JPS6346987B2 JPS6346987B2 (en) 1988-09-20

Family

ID=13054369

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5739380A Granted JPS56153757A (en) 1980-04-30 1980-04-30 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS56153757A (en)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5135289A (en) * 1974-09-20 1976-03-25 Hitachi Ltd HANDOTA ISOCHI
JPS51116679A (en) * 1975-04-05 1976-10-14 Fujitsu Ltd Diode
JPS5382275A (en) * 1976-12-28 1978-07-20 Fujitsu Ltd Production of semiconductor device
JPS53123673A (en) * 1977-04-04 1978-10-28 Nec Corp Manufacture of semiconductor device
JPS5563821A (en) * 1978-11-06 1980-05-14 Nec Corp Semiconductor device

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5135289A (en) * 1974-09-20 1976-03-25 Hitachi Ltd HANDOTA ISOCHI
JPS51116679A (en) * 1975-04-05 1976-10-14 Fujitsu Ltd Diode
JPS5382275A (en) * 1976-12-28 1978-07-20 Fujitsu Ltd Production of semiconductor device
JPS53123673A (en) * 1977-04-04 1978-10-28 Nec Corp Manufacture of semiconductor device
JPS5563821A (en) * 1978-11-06 1980-05-14 Nec Corp Semiconductor device

Also Published As

Publication number Publication date
JPS6346987B2 (en) 1988-09-20

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