JPS564248A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS564248A
JPS564248A JP7983079A JP7983079A JPS564248A JP S564248 A JPS564248 A JP S564248A JP 7983079 A JP7983079 A JP 7983079A JP 7983079 A JP7983079 A JP 7983079A JP S564248 A JPS564248 A JP S564248A
Authority
JP
Japan
Prior art keywords
layer
polycrystalline
wiring
ptsi
electrodes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7983079A
Other languages
Japanese (ja)
Inventor
Yoshiaki Suzuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP7983079A priority Critical patent/JPS564248A/en
Publication of JPS564248A publication Critical patent/JPS564248A/en
Pending legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE:To increase electric conductivity and manufacture a device of high reliability, by providing a metal silicide on a region of a wiring or electrodes made of a polycrystalline semiconductor layer to produce a connecting part between the wiring or electrodes and an upper wiring. CONSTITUTION:A base 8a and an emitter 8b are provided in an Si substrate 8. The first layer of a wiring and electrodes is made of polycrystalline layer 10 on an SiO2 layer 9. SiO2 14 is produced around the layer 10. Pt is coated by evaporation on the entire obverse side. Heat treatment of the selective condition under a nonoxidizing atmosphere is performed to provide PtSi 12 by a prescribed width W inside the entire periphery of the polycrystalline Si layer 10 and etch off the remaining Pt. Oxidation is caused under pressure to produce a thick SiO2 film 15 on the polycrystalline Si 10 and a thin film 16 on the PtSi 12. Etching is then performed to expose the PtSi 12. The second layer of wiring is made by a conventional method. A connecting part is thus made of the PtSi so that electric conductivity is increased, connection area is reduced, the wirings are not deteriorated by high-concentration impurities in the polycrystalline Si and the height difference of the connecting part is small. This results in enabling high integration with high reliability.
JP7983079A 1979-06-25 1979-06-25 Semiconductor device Pending JPS564248A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7983079A JPS564248A (en) 1979-06-25 1979-06-25 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7983079A JPS564248A (en) 1979-06-25 1979-06-25 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS564248A true JPS564248A (en) 1981-01-17

Family

ID=13701117

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7983079A Pending JPS564248A (en) 1979-06-25 1979-06-25 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS564248A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58222540A (en) * 1982-06-18 1983-12-24 Sanyo Electric Co Ltd Preparation of semiconductor device
JPS60130325A (en) * 1983-12-09 1985-07-11 ランハム マシ− ナリ− カンパニ− インコ−ポレ−テツド Oven
JPS60174585U (en) * 1984-04-25 1985-11-19 株式会社 藤澤製作所 Oven with superheated steam supply mechanism
JPS6423121U (en) * 1987-07-31 1989-02-07
JPS6423120U (en) * 1987-07-31 1989-02-07

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58222540A (en) * 1982-06-18 1983-12-24 Sanyo Electric Co Ltd Preparation of semiconductor device
JPS60130325A (en) * 1983-12-09 1985-07-11 ランハム マシ− ナリ− カンパニ− インコ−ポレ−テツド Oven
JPH0362376B2 (en) * 1983-12-09 1991-09-25 Ranhamu Mashiinarii Co Inc
JPS60174585U (en) * 1984-04-25 1985-11-19 株式会社 藤澤製作所 Oven with superheated steam supply mechanism
JPS6423121U (en) * 1987-07-31 1989-02-07
JPS6423120U (en) * 1987-07-31 1989-02-07
JPH057769Y2 (en) * 1987-07-31 1993-02-26
JPH0513057Y2 (en) * 1987-07-31 1993-04-06

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