JPS571261A - Schottky barrier type semiconductor device - Google Patents
Schottky barrier type semiconductor deviceInfo
- Publication number
- JPS571261A JPS571261A JP7437380A JP7437380A JPS571261A JP S571261 A JPS571261 A JP S571261A JP 7437380 A JP7437380 A JP 7437380A JP 7437380 A JP7437380 A JP 7437380A JP S571261 A JPS571261 A JP S571261A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- schottky barrier
- barrier type
- sio214
- constitution
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000004888 barrier function Effects 0.000 title abstract 6
- 239000004065 semiconductor Substances 0.000 title 1
- 229910052751 metal Inorganic materials 0.000 abstract 3
- 239000002184 metal Substances 0.000 abstract 3
- 239000012535 impurity Substances 0.000 abstract 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- ZXEYZECDXFPJRJ-UHFFFAOYSA-N $l^{3}-silane;platinum Chemical compound [SiH3].[Pt] ZXEYZECDXFPJRJ-UHFFFAOYSA-N 0.000 abstract 1
- 230000002411 adverse Effects 0.000 abstract 1
- QZPSXPBJTPJTSZ-UHFFFAOYSA-N aqua regia Chemical compound Cl.O[N+]([O-])=O QZPSXPBJTPJTSZ-UHFFFAOYSA-N 0.000 abstract 1
- 230000000694 effects Effects 0.000 abstract 1
- 239000012212 insulator Substances 0.000 abstract 1
- 239000007788 liquid Substances 0.000 abstract 1
- 229910052697 platinum Inorganic materials 0.000 abstract 1
- 229910021339 platinum silicide Inorganic materials 0.000 abstract 1
- 229910021332 silicide Inorganic materials 0.000 abstract 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 abstract 1
- 238000005245 sintering Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
PURPOSE:To obtain a Schottky barrier type device by avoiding the direct contact of an electrode and an Si substrate, and by substantially disregarding the adverse effects caused by the Schottky barrier. CONSTITUTION:An N epitaxial layer 12 and a nearly intrinsic highly resistive layer 13 are layered on an N<+> type Si substrate 11. A hole is perforated in SiO214, and the surface is covered by Pt15. Sintering is performed in a vacuum, and a platinum silicide layer 16 and a thin inpurity layer 17 are formed. Said layer 16 pierces through the layer 13, and the Schottky barrier is formed. With the impurity layer 17 as a mask, the Pt15 is removed with aqua regia. When the impurity layer 17 is etched by HF series liquid, the SiO214 is also etched out, and a part of the highly resistive layer 13 is exposed around the Pt16. A metal electrode 18 is provided and electrically connected with the platinum silcide layer 16. Since the layer 13 is close to an insulator, the layer 13 is not affected even through it is contacted with the metal electrode 18. In this constitution, the height of the barrier becomes uniform, and the Schottky barrier type device of the silicide metal having excellent withstanding voltage can be obtained.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7437380A JPS571261A (en) | 1980-06-04 | 1980-06-04 | Schottky barrier type semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7437380A JPS571261A (en) | 1980-06-04 | 1980-06-04 | Schottky barrier type semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS571261A true JPS571261A (en) | 1982-01-06 |
Family
ID=13545295
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7437380A Pending JPS571261A (en) | 1980-06-04 | 1980-06-04 | Schottky barrier type semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS571261A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62117170A (en) * | 1985-11-15 | 1987-05-28 | Teac Co | Disc device |
| JPS62117557A (en) * | 1985-11-15 | 1987-05-29 | 井浦 忠 | Moving truck |
-
1980
- 1980-06-04 JP JP7437380A patent/JPS571261A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62117170A (en) * | 1985-11-15 | 1987-05-28 | Teac Co | Disc device |
| JPS62117557A (en) * | 1985-11-15 | 1987-05-29 | 井浦 忠 | Moving truck |
| JPH0231984B2 (en) * | 1985-11-15 | 1990-07-17 | Tadashi Iura |
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