JPS6439059A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS6439059A
JPS6439059A JP9776287A JP9776287A JPS6439059A JP S6439059 A JPS6439059 A JP S6439059A JP 9776287 A JP9776287 A JP 9776287A JP 9776287 A JP9776287 A JP 9776287A JP S6439059 A JPS6439059 A JP S6439059A
Authority
JP
Japan
Prior art keywords
electrodes
base
lead
deposited
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9776287A
Other languages
Japanese (ja)
Inventor
Masaharu Yorikane
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP9776287A priority Critical patent/JPS6439059A/en
Publication of JPS6439059A publication Critical patent/JPS6439059A/en
Pending legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE:To decrease the resistance values of electrodes and to implement a high speed in circuit operation, by forming a metal layer or a metal alloy layer on the surface of at least lower electrodes other than the overlapped part of the lower electrodes and an upper electrode, which comprise a semiconductor material. CONSTITUTION:Platinum is deposited on a silicon substrate 101, which include base and emitter lead-out electrodes 106 and 107. Thereafter, heat treatment is performed. A platinum silicide layer 111 is formed on the surfaces of the base and emitter lead-out electrodes 106 and 107. Then, a silicon oxide film 109 is deposited on the entire surface. A hole is provided in said film. An aluminum electrode 110 is formed. Therefore, the most part of the base lead-out electrode 106, which is connected to an outer base 103, is covered with the low resistance platinum silicide layer 111. Thus the resistances of the lead-out electrodes can be made low, and the speed of the circuit operation can be made fast.
JP9776287A 1987-04-20 1987-04-20 Semiconductor device Pending JPS6439059A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9776287A JPS6439059A (en) 1987-04-20 1987-04-20 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9776287A JPS6439059A (en) 1987-04-20 1987-04-20 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS6439059A true JPS6439059A (en) 1989-02-09

Family

ID=14200880

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9776287A Pending JPS6439059A (en) 1987-04-20 1987-04-20 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS6439059A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02203526A (en) * 1989-02-01 1990-08-13 Sony Corp Semiconductor device
JPH0462838A (en) * 1990-06-25 1992-02-27 Matsushita Electron Corp Semiconductor device

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55103740A (en) * 1979-01-31 1980-08-08 Nec Corp Semiconductor device
JPS5974622A (en) * 1982-10-22 1984-04-27 Hitachi Ltd Electrode of semiconductor device and manufacture thereof
JPS6066450A (en) * 1983-09-21 1985-04-16 Seiko Epson Corp Multilayer interconnection
JPS61203653A (en) * 1985-03-06 1986-09-09 Nec Corp Connection of wiring
JPS625657A (en) * 1985-07-01 1987-01-12 Nec Corp Semiconductor integrated circuit device
JPS62117368A (en) * 1985-11-15 1987-05-28 Mitsubishi Electric Corp Semiconductor device

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55103740A (en) * 1979-01-31 1980-08-08 Nec Corp Semiconductor device
JPS5974622A (en) * 1982-10-22 1984-04-27 Hitachi Ltd Electrode of semiconductor device and manufacture thereof
JPS6066450A (en) * 1983-09-21 1985-04-16 Seiko Epson Corp Multilayer interconnection
JPS61203653A (en) * 1985-03-06 1986-09-09 Nec Corp Connection of wiring
JPS625657A (en) * 1985-07-01 1987-01-12 Nec Corp Semiconductor integrated circuit device
JPS62117368A (en) * 1985-11-15 1987-05-28 Mitsubishi Electric Corp Semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02203526A (en) * 1989-02-01 1990-08-13 Sony Corp Semiconductor device
JPH0462838A (en) * 1990-06-25 1992-02-27 Matsushita Electron Corp Semiconductor device

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