JPS5662358A - Semiconductor device and its manufacturing method - Google Patents

Semiconductor device and its manufacturing method

Info

Publication number
JPS5662358A
JPS5662358A JP13762079A JP13762079A JPS5662358A JP S5662358 A JPS5662358 A JP S5662358A JP 13762079 A JP13762079 A JP 13762079A JP 13762079 A JP13762079 A JP 13762079A JP S5662358 A JPS5662358 A JP S5662358A
Authority
JP
Japan
Prior art keywords
layer
poly
electrode
film
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13762079A
Other languages
Japanese (ja)
Inventor
Kohei Yamada
Hiroshi Ikeda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP13762079A priority Critical patent/JPS5662358A/en
Publication of JPS5662358A publication Critical patent/JPS5662358A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/45—Ohmic electrodes
    • H01L29/456—Ohmic electrodes on silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/33—Structure, shape, material or disposition of the layer connectors after the connecting process of a plurality of layer connectors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE:To provide an electrode wiring having a high thermal resistance by a method wherein a poly Si layer is formed on the electrode forming surface in a base board having pn conjunction and then an electrode made of heat-resistant metal is formed thereon. CONSTITUTION:Semiconductor device or element is formed by a base board 11, a dispersion area 12, a surface oxide film 13, poly Si layer 14, Ti-Pd film 15, Ag bump 16, and Au-Ag electrode layer 17. The contact part of the semiconductor element may provide a superior ohm contact by the poly Si layer 14 and at the same time may be durable against a high temperature at the sealing of DHD (double heat sink diode) through Ti-Pd film of a thermal resistance metal.
JP13762079A 1979-10-26 1979-10-26 Semiconductor device and its manufacturing method Pending JPS5662358A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13762079A JPS5662358A (en) 1979-10-26 1979-10-26 Semiconductor device and its manufacturing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13762079A JPS5662358A (en) 1979-10-26 1979-10-26 Semiconductor device and its manufacturing method

Publications (1)

Publication Number Publication Date
JPS5662358A true JPS5662358A (en) 1981-05-28

Family

ID=15202923

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13762079A Pending JPS5662358A (en) 1979-10-26 1979-10-26 Semiconductor device and its manufacturing method

Country Status (1)

Country Link
JP (1) JPS5662358A (en)

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