JPS5556669A - Semiconductor device and its manufacture - Google Patents

Semiconductor device and its manufacture

Info

Publication number
JPS5556669A
JPS5556669A JP12962578A JP12962578A JPS5556669A JP S5556669 A JPS5556669 A JP S5556669A JP 12962578 A JP12962578 A JP 12962578A JP 12962578 A JP12962578 A JP 12962578A JP S5556669 A JPS5556669 A JP S5556669A
Authority
JP
Japan
Prior art keywords
paste
substrate
conductive paste
whose main
break
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12962578A
Other languages
Japanese (ja)
Inventor
Jun Fukuchi
Manabu Yoshida
Shigetoshi Takayanagi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP12962578A priority Critical patent/JPS5556669A/en
Priority to US06/085,205 priority patent/US4256513A/en
Publication of JPS5556669A publication Critical patent/JPS5556669A/en
Pending legal-status Critical Current

Links

Classifications

    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Chemically Coating (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Photovoltaic Devices (AREA)

Abstract

PURPOSE: To facilitate the formation of electrodes by depositing Ni and the like on the main surface of one side of a substrate which has a diffused layer on the main surface of the other side, applying conductive paste whose main components are Ag, Au, and Al on the diffused layer, and applying the conductive paste whose main component is Ag on the Ni side at the same sintering temperature.
CONSTITUTION: A conductive paste 4 whose main components are Ag, Au, and Al are provided on a diffusion layer 2 which forms a pn junction. On an n-type substrate, is deposited Ni which has the same effect to raise the surface-impurity concentration, and is applied a conductive paste 5 whose main component is Ag. The paste 4 is well contacted at temperatures (550∼650°C) lower than before, and the electrode which has low contact resistance and is not subjected to the break through the shallow diffusion layer can be reproduced. The paste 5 is sintered in concurrence with the sintering of the paste 4 and makes ohmic contact with the substrate, generating nickel silicide at the boundary between the substrate and Ni, thereby the resistance is decreased. When the sintering temperature exceeds 650°C, break through occurrs. At the temperature lower than 550°C, the contact resistance is increased, and the transducing efficiency is degraded.
COPYRIGHT: (C)1980,JPO&Japio
JP12962578A 1978-10-19 1978-10-20 Semiconductor device and its manufacture Pending JPS5556669A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP12962578A JPS5556669A (en) 1978-10-20 1978-10-20 Semiconductor device and its manufacture
US06/085,205 US4256513A (en) 1978-10-19 1979-10-16 Photoelectric conversion device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12962578A JPS5556669A (en) 1978-10-20 1978-10-20 Semiconductor device and its manufacture

Publications (1)

Publication Number Publication Date
JPS5556669A true JPS5556669A (en) 1980-04-25

Family

ID=15014100

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12962578A Pending JPS5556669A (en) 1978-10-19 1978-10-20 Semiconductor device and its manufacture

Country Status (1)

Country Link
JP (1) JPS5556669A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5967955U (en) * 1982-10-27 1984-05-08 シャープ株式会社 solar cell element
CN102568652A (en) * 2012-02-28 2012-07-11 武涛 Crystalline silicon solar cell electrode paste and preparation method thereof
WO2017109835A1 (en) * 2015-12-21 2017-06-29 三菱電機株式会社 Solar cell manufacturing method

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5967955U (en) * 1982-10-27 1984-05-08 シャープ株式会社 solar cell element
JPS638150Y2 (en) * 1982-10-27 1988-03-10
CN102568652A (en) * 2012-02-28 2012-07-11 武涛 Crystalline silicon solar cell electrode paste and preparation method thereof
WO2017109835A1 (en) * 2015-12-21 2017-06-29 三菱電機株式会社 Solar cell manufacturing method
JPWO2017109835A1 (en) * 2015-12-21 2018-03-29 三菱電機株式会社 Manufacturing method of solar cell

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