JPS54124991A - Semiconductor luminous unit - Google Patents

Semiconductor luminous unit

Info

Publication number
JPS54124991A
JPS54124991A JP3340078A JP3340078A JPS54124991A JP S54124991 A JPS54124991 A JP S54124991A JP 3340078 A JP3340078 A JP 3340078A JP 3340078 A JP3340078 A JP 3340078A JP S54124991 A JPS54124991 A JP S54124991A
Authority
JP
Japan
Prior art keywords
layer
striped
type
type inp
grooves
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3340078A
Other languages
Japanese (ja)
Inventor
Tsugio Kumai
Hiroshi Nishi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP3340078A priority Critical patent/JPS54124991A/en
Publication of JPS54124991A publication Critical patent/JPS54124991A/en
Pending legal-status Critical Current

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Landscapes

  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)

Abstract

PURPOSE: To reduce a series resistance value of an ohmic contact resistance, by forming a striped structure even by using InP for the material of a luminous unit.
CONSTITUTION: On n-type InP substrate 1, n-type InP clad layer 2, In1-xGaxAs1-yPy active layer 3, p-type InP clad layer 4, and n-type InP clad layer 5 are stacked. Striped grooves 6 and provided and made to reach layer 4 sufficiently by photoetching. Next, p-type striped layer is formed filling grooves to flatten the surface, p-type In1-xGaxAs1-yPy layer 8 is stacked, and electrodes 9 and 10 are provided. In this method, the extremely-simplified formation of the striped structure can be realized only by selecting striped grooves for the clad layers. The value of the series resistance of an ohmic contact resistance is low since cap layer 8 covers the entire surface of the unit touching metal electrodes in spite of the striped structure.
COPYRIGHT: (C)1979,JPO&Japio
JP3340078A 1978-03-23 1978-03-23 Semiconductor luminous unit Pending JPS54124991A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3340078A JPS54124991A (en) 1978-03-23 1978-03-23 Semiconductor luminous unit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3340078A JPS54124991A (en) 1978-03-23 1978-03-23 Semiconductor luminous unit

Publications (1)

Publication Number Publication Date
JPS54124991A true JPS54124991A (en) 1979-09-28

Family

ID=12385537

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3340078A Pending JPS54124991A (en) 1978-03-23 1978-03-23 Semiconductor luminous unit

Country Status (1)

Country Link
JP (1) JPS54124991A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4481523A (en) * 1980-12-02 1984-11-06 Fujitsu Limited Avalanche photodiodes
US4764796A (en) * 1985-12-19 1988-08-16 Sumitomo Electric Industries, Ltd. Heterojunction field effect transistor with two-dimensional electron layer

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4481523A (en) * 1980-12-02 1984-11-06 Fujitsu Limited Avalanche photodiodes
US4764796A (en) * 1985-12-19 1988-08-16 Sumitomo Electric Industries, Ltd. Heterojunction field effect transistor with two-dimensional electron layer

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