JPS54130888A - Semiconductor luminous display device - Google Patents
Semiconductor luminous display deviceInfo
- Publication number
- JPS54130888A JPS54130888A JP3808578A JP3808578A JPS54130888A JP S54130888 A JPS54130888 A JP S54130888A JP 3808578 A JP3808578 A JP 3808578A JP 3808578 A JP3808578 A JP 3808578A JP S54130888 A JPS54130888 A JP S54130888A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- impurity
- density
- impurity density
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/32257—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic the layer connector connecting to a bonding area disposed in a recess of the surface of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01015—Phosphorus [P]
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
- Led Devices (AREA)
Abstract
PURPOSE: To change a luminous color from one PN junction according to the change of a forward-direction conduction current by making the surface impurity density of a p-type layer, which constitute the PN junction, higher than the surface impurity density of a N-type layer.
CONSTITUTION: N-type layer 12 of surface density 1×1016 to 1×1018 atoms/cm3 with donor impurity Te of S added is grown epitaxially on N-type substrate 1 such as GaP in liquid phase. Next, p-type layer 13 of surface impurity density 5×1016 to 5×1018 atoms/cm3 with acceptor impurity Zn and Ga oxide or Zn oxide added is grown epitaxially on layer 12 in liquid phase. At this time, impurity is added in an Ar or H2 gas atmosphere, and the acceptor impurity density is made higher than the donor impurity density by one digit. After that, the electrode layer consisting of AuZn or AuBe layer 14 and Au layer 15 and the electrode layer consisting of layer 16 and layer 17 are provided in the p side and on reverse face of substrate 1 respectively, and the substrate is diced to produce pellets.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3808578A JPS54130888A (en) | 1978-04-03 | 1978-04-03 | Semiconductor luminous display device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3808578A JPS54130888A (en) | 1978-04-03 | 1978-04-03 | Semiconductor luminous display device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS54130888A true JPS54130888A (en) | 1979-10-11 |
Family
ID=12515625
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP3808578A Pending JPS54130888A (en) | 1978-04-03 | 1978-04-03 | Semiconductor luminous display device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS54130888A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5300792A (en) * | 1991-10-15 | 1994-04-05 | Shin-Etsu Handotai Co., Ltd. | Gap red light emitting diode |
-
1978
- 1978-04-03 JP JP3808578A patent/JPS54130888A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5300792A (en) * | 1991-10-15 | 1994-04-05 | Shin-Etsu Handotai Co., Ltd. | Gap red light emitting diode |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
GB1470744A (en) | Light emitting semi-conductor devices | |
JPS54152878A (en) | Structure of semiconductor laser element and its manufacture | |
JPS549592A (en) | Luminous semiconductor element | |
JPS54130888A (en) | Semiconductor luminous display device | |
JPS54112182A (en) | Semiconductor device | |
JPS52152184A (en) | Semiconductor device | |
JPS55162223A (en) | Semiconductor device and its preparation | |
JPS5428581A (en) | Manufacture of semiconductor device | |
JPS5552219A (en) | Semiconductor wafer | |
JPS55108785A (en) | Galium phosphide green luminous element | |
JPS54107287A (en) | Semiconductor light emission diode | |
JPS5423391A (en) | Gallium-arsenic semiconductor element | |
JPS5376760A (en) | Semiconductor rectifying device | |
JPS54134586A (en) | Production of solar battery using compound semiconductor crystal | |
JPS55105389A (en) | Manufacture of light emission diode | |
JPS5371559A (en) | Manufacture of pn junction | |
JPS52104090A (en) | Planer-type light-emitting unit | |
JPS5314585A (en) | Semiconductor device | |
JPS54107288A (en) | Surface luminous-type light emission diode | |
JPS5683085A (en) | Luminous semiconductor device and its manufacture | |
JPS551139A (en) | Current supply type semiconductor light-emitting device | |
JPS5550656A (en) | Semiconductor device | |
JPS5518073A (en) | Manufacture of variable-capacity diode | |
JPS52155081A (en) | Production of gallium phosphide light emitting element | |
JPS55103777A (en) | Phototransistor |