JPS54107288A - Surface luminous-type light emission diode - Google Patents

Surface luminous-type light emission diode

Info

Publication number
JPS54107288A
JPS54107288A JP1425878A JP1425878A JPS54107288A JP S54107288 A JPS54107288 A JP S54107288A JP 1425878 A JP1425878 A JP 1425878A JP 1425878 A JP1425878 A JP 1425878A JP S54107288 A JPS54107288 A JP S54107288A
Authority
JP
Japan
Prior art keywords
layer
light emission
surface luminous
type light
gaas substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1425878A
Other languages
Japanese (ja)
Inventor
Kuniaki Iwamoto
Isao Hino
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP1425878A priority Critical patent/JPS54107288A/en
Publication of JPS54107288A publication Critical patent/JPS54107288A/en
Pending legal-status Critical Current

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Abstract

PURPOSE: To obtain a LED where pulse response characteristic is improved without damaging light emission efficiency and the linearity of current light output characteristic is superior, in the surface luminous-type diode which has the light emission region limited.
CONSTITUTION: n-AlxGa1-xAs layer 11, n-AlzGa1-zAs layer 12' of a light emission layer, n-AlxGa1-xAs layer 13' and n-AlyGa1-yAs layer 14 are successively grown in crystal on n-GaAs substrate 40 by epitaxial growth method. For the puspose of obtaining a prescribed light emission path at the center from the bottom of layer 14, p-type impurity is selectively diffused to provide region 15 and form p-type electrode 17 through insulating film 19. Meanwhile, n-type electrode 16 is formed on the upper face of n-GaAs substrate 40 which is left by selective etching.
COPYRIGHT: (C)1979,JPO&Japio
JP1425878A 1978-02-10 1978-02-10 Surface luminous-type light emission diode Pending JPS54107288A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1425878A JPS54107288A (en) 1978-02-10 1978-02-10 Surface luminous-type light emission diode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1425878A JPS54107288A (en) 1978-02-10 1978-02-10 Surface luminous-type light emission diode

Publications (1)

Publication Number Publication Date
JPS54107288A true JPS54107288A (en) 1979-08-22

Family

ID=11856057

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1425878A Pending JPS54107288A (en) 1978-02-10 1978-02-10 Surface luminous-type light emission diode

Country Status (1)

Country Link
JP (1) JPS54107288A (en)

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