JPS54152487A - Manufacture of semiconductor laser unit - Google Patents
Manufacture of semiconductor laser unitInfo
- Publication number
- JPS54152487A JPS54152487A JP6120578A JP6120578A JPS54152487A JP S54152487 A JPS54152487 A JP S54152487A JP 6120578 A JP6120578 A JP 6120578A JP 6120578 A JP6120578 A JP 6120578A JP S54152487 A JPS54152487 A JP S54152487A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- thin film
- type
- diffusion
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE: To obtain a device which has a low oscillation threshold current by forming an insulating thin film for diffusion prevention on a semiconductor substrate in a stripe shape, by covering the entire surface with an insulating thin film for diffusion control, and by diffusion-forming a reverse-conductive region through the control thin film.
CONSTITUTION: On N-type GaAs substrate 9, Si3N4 diffusion preventing thin film 10 is formed in a stripe shape and on the entire surface including this, SiO2 diffusion control thin film 11 is grown. Next although Zn is diffused through film 11 to form P-type region 12, no Zn reaches under film 10 at this time. Then, a surface exposed by removing films 10 and 11 is cleaned by etching and a lamination of N-type Ga1-yAlyAs layer 13, N-type Ga1-2AlAS layer 14, P-tupe Ga1-yAly'As layer 15, P- type GaAs layer 16, and N-type Ga1-wAlwAs current-limiting layer 17 (z<y, y'<w) is formed by liquid-phase epitaxial growth. Next, the entire surface is covered with a SiO2 film and windows 9 are made at stripe positions to obtain layer 17 exposed in a stripe shape; and Zn is diffused to layer 17 and electrodes 18 and 19 are fitted to the top and reverse surfaces.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6120578A JPS54152487A (en) | 1978-05-22 | 1978-05-22 | Manufacture of semiconductor laser unit |
CA327,820A CA1127282A (en) | 1978-05-22 | 1979-05-17 | Semiconductor laser and method of making the same |
US06/040,182 US4296387A (en) | 1978-05-22 | 1979-05-18 | Semiconductor laser |
GB7917476A GB2038079B (en) | 1978-05-22 | 1979-05-18 | Semiconductor laser |
FR7912791A FR2426992A1 (en) | 1978-05-22 | 1979-05-18 | SEMICONDUCTOR LASER AND MANUFACTURING OF THIS LASER |
DE2920454A DE2920454C2 (en) | 1978-05-22 | 1979-05-21 | Semiconductor lasers and processes for their manufacture |
US06/266,134 US4380861A (en) | 1978-05-22 | 1981-05-21 | Method of making a semiconductor laser by liquid phase epitaxial growths |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6120578A JPS54152487A (en) | 1978-05-22 | 1978-05-22 | Manufacture of semiconductor laser unit |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS54152487A true JPS54152487A (en) | 1979-11-30 |
Family
ID=13164445
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP6120578A Pending JPS54152487A (en) | 1978-05-22 | 1978-05-22 | Manufacture of semiconductor laser unit |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS54152487A (en) |
-
1978
- 1978-05-22 JP JP6120578A patent/JPS54152487A/en active Pending
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