JPS54152487A - Manufacture of semiconductor laser unit - Google Patents

Manufacture of semiconductor laser unit

Info

Publication number
JPS54152487A
JPS54152487A JP6120578A JP6120578A JPS54152487A JP S54152487 A JPS54152487 A JP S54152487A JP 6120578 A JP6120578 A JP 6120578A JP 6120578 A JP6120578 A JP 6120578A JP S54152487 A JPS54152487 A JP S54152487A
Authority
JP
Japan
Prior art keywords
layer
thin film
type
diffusion
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6120578A
Other languages
Japanese (ja)
Inventor
Takashi Sugino
Kunio Ito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP6120578A priority Critical patent/JPS54152487A/en
Priority to CA327,820A priority patent/CA1127282A/en
Priority to US06/040,182 priority patent/US4296387A/en
Priority to GB7917476A priority patent/GB2038079B/en
Priority to FR7912791A priority patent/FR2426992A1/en
Priority to DE2920454A priority patent/DE2920454C2/en
Publication of JPS54152487A publication Critical patent/JPS54152487A/en
Priority to US06/266,134 priority patent/US4380861A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To obtain a device which has a low oscillation threshold current by forming an insulating thin film for diffusion prevention on a semiconductor substrate in a stripe shape, by covering the entire surface with an insulating thin film for diffusion control, and by diffusion-forming a reverse-conductive region through the control thin film.
CONSTITUTION: On N-type GaAs substrate 9, Si3N4 diffusion preventing thin film 10 is formed in a stripe shape and on the entire surface including this, SiO2 diffusion control thin film 11 is grown. Next although Zn is diffused through film 11 to form P-type region 12, no Zn reaches under film 10 at this time. Then, a surface exposed by removing films 10 and 11 is cleaned by etching and a lamination of N-type Ga1-yAlyAs layer 13, N-type Ga1-2AlAS layer 14, P-tupe Ga1-yAly'As layer 15, P- type GaAs layer 16, and N-type Ga1-wAlwAs current-limiting layer 17 (z<y, y'<w) is formed by liquid-phase epitaxial growth. Next, the entire surface is covered with a SiO2 film and windows 9 are made at stripe positions to obtain layer 17 exposed in a stripe shape; and Zn is diffused to layer 17 and electrodes 18 and 19 are fitted to the top and reverse surfaces.
COPYRIGHT: (C)1979,JPO&Japio
JP6120578A 1978-05-22 1978-05-22 Manufacture of semiconductor laser unit Pending JPS54152487A (en)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP6120578A JPS54152487A (en) 1978-05-22 1978-05-22 Manufacture of semiconductor laser unit
CA327,820A CA1127282A (en) 1978-05-22 1979-05-17 Semiconductor laser and method of making the same
US06/040,182 US4296387A (en) 1978-05-22 1979-05-18 Semiconductor laser
GB7917476A GB2038079B (en) 1978-05-22 1979-05-18 Semiconductor laser
FR7912791A FR2426992A1 (en) 1978-05-22 1979-05-18 SEMICONDUCTOR LASER AND MANUFACTURING OF THIS LASER
DE2920454A DE2920454C2 (en) 1978-05-22 1979-05-21 Semiconductor lasers and processes for their manufacture
US06/266,134 US4380861A (en) 1978-05-22 1981-05-21 Method of making a semiconductor laser by liquid phase epitaxial growths

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6120578A JPS54152487A (en) 1978-05-22 1978-05-22 Manufacture of semiconductor laser unit

Publications (1)

Publication Number Publication Date
JPS54152487A true JPS54152487A (en) 1979-11-30

Family

ID=13164445

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6120578A Pending JPS54152487A (en) 1978-05-22 1978-05-22 Manufacture of semiconductor laser unit

Country Status (1)

Country Link
JP (1) JPS54152487A (en)

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