JPS5599782A - Manufacture of guard ring for semiconductor photodetector - Google Patents

Manufacture of guard ring for semiconductor photodetector

Info

Publication number
JPS5599782A
JPS5599782A JP657179A JP657179A JPS5599782A JP S5599782 A JPS5599782 A JP S5599782A JP 657179 A JP657179 A JP 657179A JP 657179 A JP657179 A JP 657179A JP S5599782 A JPS5599782 A JP S5599782A
Authority
JP
Japan
Prior art keywords
semiconductor
mask
guard ring
junction
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP657179A
Other languages
Japanese (ja)
Inventor
Hiroshi Kanbe
Nobuhiko Susa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP657179A priority Critical patent/JPS5599782A/en
Publication of JPS5599782A publication Critical patent/JPS5599782A/en
Pending legal-status Critical Current

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  • Light Receiving Elements (AREA)

Abstract

PURPOSE: To reduce the number of mask forming processes and effectively control high purity crystalline growth by forming a guard ring to prevent breakdown in the junction ends in an avalanche type photodetector.
CONSTITUTION: A junction if formed of p-layer 2 and n-layer 3 in a semiconductor. Next, the surface of the semiconductor is coated with SiO2. By selective etching, mask 12 of the desired size is retained. The part of the semiconductor not covered with mask 12 is etched beyond the depth to expose pn-junction 13. By epitaxial growth, semiconductor layer 11, which is a guard ring, is a grown only on the exposed part of the semiconductor, except for mask 12. Mask 12 is removed, or in the condition of retaining it, reflection preventing film 7, electrodes 4 and 5 formed by the conventional method.
COPYRIGHT: (C)1980,JPO&Japio
JP657179A 1979-01-25 1979-01-25 Manufacture of guard ring for semiconductor photodetector Pending JPS5599782A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP657179A JPS5599782A (en) 1979-01-25 1979-01-25 Manufacture of guard ring for semiconductor photodetector

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP657179A JPS5599782A (en) 1979-01-25 1979-01-25 Manufacture of guard ring for semiconductor photodetector

Publications (1)

Publication Number Publication Date
JPS5599782A true JPS5599782A (en) 1980-07-30

Family

ID=11642015

Family Applications (1)

Application Number Title Priority Date Filing Date
JP657179A Pending JPS5599782A (en) 1979-01-25 1979-01-25 Manufacture of guard ring for semiconductor photodetector

Country Status (1)

Country Link
JP (1) JPS5599782A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5731511U (en) * 1980-07-31 1982-02-19
JPS57111073A (en) * 1980-12-26 1982-07-10 Sumitomo Electric Ind Ltd Semiconductor light-receiving element
JPS58170080A (en) * 1982-03-31 1983-10-06 Nippon Telegr & Teleph Corp <Ntt> Semiconductor photodetecting element

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5731511U (en) * 1980-07-31 1982-02-19
JPS6214324Y2 (en) * 1980-07-31 1987-04-13
JPS57111073A (en) * 1980-12-26 1982-07-10 Sumitomo Electric Ind Ltd Semiconductor light-receiving element
JPS58170080A (en) * 1982-03-31 1983-10-06 Nippon Telegr & Teleph Corp <Ntt> Semiconductor photodetecting element

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