JPS5472991A - Manufacture of photo semiconductor device with monitor - Google Patents
Manufacture of photo semiconductor device with monitorInfo
- Publication number
- JPS5472991A JPS5472991A JP14036177A JP14036177A JPS5472991A JP S5472991 A JPS5472991 A JP S5472991A JP 14036177 A JP14036177 A JP 14036177A JP 14036177 A JP14036177 A JP 14036177A JP S5472991 A JPS5472991 A JP S5472991A
- Authority
- JP
- Japan
- Prior art keywords
- film
- substrate
- groove
- flank
- fitted
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
- H01S5/0262—Photo-diodes, e.g. transceiver devices, bidirectional devices
- H01S5/0264—Photo-diodes, e.g. transceiver devices, bidirectional devices for monitoring the laser-output
Abstract
PURPOSE:To improve mass-producibility with manufacture simplified by covering the entire surface of a semiconductor substrate with an insulating film after a plural number of grooves are formed in its surface, by diffusion-forming a light-reception diode on its flank surface exposed by removing the film of the groove flank, and then by pelletizing substrate by cutting off it at the center of the groove. CONSTITUTION:On P-type Si substrate 4, SiO2 film 5 is adherd and made into stripes by a photo-lithograpy method, which is used as a mask for etching to provide a plural number of concave grooves 6 in the surface of substrate 4. Next, film 5 is removed, SiO2 film 7 is adhered to the entire surface again, and film 7 on the flank surface of groove 6 is selectively etched and removed. On this flank surface exposed, N-type region 8 is diffusion-formed to obtain the light-reception diode which becomes a photo detector. Next, region 8 is fitted with N-type electrode 9, P- type electrode 10 is also fitted where film 7 on the bottom surface of groove 6 used as the mask at the time of forming region 8 is removed, and P-type electrode 11 is fitted to the reverse surface of substrate 4. Then, the substrate is pelletized by being cut off at the center part of groove 6.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP52140361A JPS5931998B2 (en) | 1977-11-22 | 1977-11-22 | Manufacturing method of optical semiconductor device with monitor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP52140361A JPS5931998B2 (en) | 1977-11-22 | 1977-11-22 | Manufacturing method of optical semiconductor device with monitor |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5472991A true JPS5472991A (en) | 1979-06-11 |
JPS5931998B2 JPS5931998B2 (en) | 1984-08-06 |
Family
ID=15267026
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP52140361A Expired JPS5931998B2 (en) | 1977-11-22 | 1977-11-22 | Manufacturing method of optical semiconductor device with monitor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5931998B2 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01244671A (en) * | 1988-03-26 | 1989-09-29 | Mitsubishi Electric Corp | Semiconductor light emitting device |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6313099U (en) * | 1986-07-12 | 1988-01-28 |
-
1977
- 1977-11-22 JP JP52140361A patent/JPS5931998B2/en not_active Expired
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01244671A (en) * | 1988-03-26 | 1989-09-29 | Mitsubishi Electric Corp | Semiconductor light emitting device |
Also Published As
Publication number | Publication date |
---|---|
JPS5931998B2 (en) | 1984-08-06 |
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