JPS5516408A - Detector for multiple light communication - Google Patents

Detector for multiple light communication

Info

Publication number
JPS5516408A
JPS5516408A JP8837078A JP8837078A JPS5516408A JP S5516408 A JPS5516408 A JP S5516408A JP 8837078 A JP8837078 A JP 8837078A JP 8837078 A JP8837078 A JP 8837078A JP S5516408 A JPS5516408 A JP S5516408A
Authority
JP
Japan
Prior art keywords
type layer
light
layer
composition
electrodes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8837078A
Other languages
Japanese (ja)
Inventor
Akira Mita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP8837078A priority Critical patent/JPS5516408A/en
Publication of JPS5516408A publication Critical patent/JPS5516408A/en
Pending legal-status Critical Current

Links

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  • Light Receiving Elements (AREA)

Abstract

PURPOSE: To detect easily and with high sensitivity multiple light of 1.06μ and 1.32μ by providing a light-shielding layer between semiconductor junctions.
CONSTITUTION: On a substrate 11 of InP monocrystal are provided a N-type layer 12 with a composition of Ga0.08In0.92As0.80P0.20, a P-type layer 13 with the same composition as the N-type layer 12, a 3μ light-shielding layer 14 of P-type conductivity with a composition of Ga0.15In0.85As0.62P0.50, a P-type layer 15 with a composition of Ga0.22In0.78As0.50P0.50, and a N-type layer 16 with the same composition as the P-type layer 15, in this order. After exposing parts of the substrate and light-shielding layer by etching, a surface layer and electrodes 17, 18 and 19 are provided. As apparent from the spectral sensitive characteristics shown in the figure, there can be obtained a light detector which, when electrodes 17 and 18 are used, has a peak at 1.32μ as indicated by curve 21 and, when electrodes 18 and 19 are used, has a peak at 1.06μ as indicated by curve 22.
COPYRIGHT: (C)1980,JPO&Japio
JP8837078A 1978-07-21 1978-07-21 Detector for multiple light communication Pending JPS5516408A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8837078A JPS5516408A (en) 1978-07-21 1978-07-21 Detector for multiple light communication

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8837078A JPS5516408A (en) 1978-07-21 1978-07-21 Detector for multiple light communication

Publications (1)

Publication Number Publication Date
JPS5516408A true JPS5516408A (en) 1980-02-05

Family

ID=13940901

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8837078A Pending JPS5516408A (en) 1978-07-21 1978-07-21 Detector for multiple light communication

Country Status (1)

Country Link
JP (1) JPS5516408A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57138187A (en) * 1981-02-19 1982-08-26 Mitsubishi Electric Corp Optical transmission network
DE102016001388A1 (en) * 2016-02-09 2017-08-10 Azur Space Solar Power Gmbh optocoupler
CN108807588A (en) * 2018-06-15 2018-11-13 杭州国翌科技有限公司 One chip n-i-p-i-n molded breadth spectrum photodetectors
DE102020000549A1 (en) 2020-01-29 2021-07-29 Azur Space Solar Power Gmbh Stacked photonic III-V semiconductor device
CN114373813A (en) * 2021-12-14 2022-04-19 华南理工大学 Chip for visible light communication and preparation method and application thereof

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5051285A (en) * 1973-09-05 1975-05-08
JPS5158086A (en) * 1974-11-18 1976-05-21 Mitsubishi Electric Corp

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5051285A (en) * 1973-09-05 1975-05-08
JPS5158086A (en) * 1974-11-18 1976-05-21 Mitsubishi Electric Corp

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57138187A (en) * 1981-02-19 1982-08-26 Mitsubishi Electric Corp Optical transmission network
DE102016001388A1 (en) * 2016-02-09 2017-08-10 Azur Space Solar Power Gmbh optocoupler
DE102016001388B4 (en) * 2016-02-09 2018-09-27 Azur Space Solar Power Gmbh optocoupler
US10916677B2 (en) 2016-02-09 2021-02-09 Azur Space Solar Power Gmbh Optocoupler
CN108807588A (en) * 2018-06-15 2018-11-13 杭州国翌科技有限公司 One chip n-i-p-i-n molded breadth spectrum photodetectors
DE102020000549A1 (en) 2020-01-29 2021-07-29 Azur Space Solar Power Gmbh Stacked photonic III-V semiconductor device
CN114373813A (en) * 2021-12-14 2022-04-19 华南理工大学 Chip for visible light communication and preparation method and application thereof

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