JPS5459890A - Discriminating method of spectral sensitivity characteristics of photo diodes - Google Patents

Discriminating method of spectral sensitivity characteristics of photo diodes

Info

Publication number
JPS5459890A
JPS5459890A JP12661877A JP12661877A JPS5459890A JP S5459890 A JPS5459890 A JP S5459890A JP 12661877 A JP12661877 A JP 12661877A JP 12661877 A JP12661877 A JP 12661877A JP S5459890 A JPS5459890 A JP S5459890A
Authority
JP
Japan
Prior art keywords
electrodes
spectral sensitivity
layer
type gaas
sensitivity characteristics
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP12661877A
Other languages
Japanese (ja)
Other versions
JPS6145872B2 (en
Inventor
Kazuo Kiyohashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP12661877A priority Critical patent/JPS5459890A/en
Publication of JPS5459890A publication Critical patent/JPS5459890A/en
Publication of JPS6145872B2 publication Critical patent/JPS6145872B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Light Receiving Elements (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)

Abstract

PURPOSE: To make possible knowing spectral sensitivity characteristics of diodes by providing electrodes on the semiconductor layer on the light receiving side of a photo diode of PN junction type by leaving a spacing and measuring the resistance value between these electrodes.
CONSTITUTION: An N type GaAs1-XPX layer 2 is grown on an N type GaAs substrate 1, while letting the P component slope. On this is likewise grown an N type GaAs1-XPX layer 3 by selecting (X) at 0.37 to 0.41 and using Te for a doping impurity while causing the regions where the P component is sloping and constant to be produced. Next, with an oxide film 4 as a mask, Zn is diffused in the layer 3, forming a PN jucktion 5 to provide a light detecting face 8, where Al electrodes 6 and 6' are mounted by leading a spacing therebetween. An Au- Ge alloy electrode 7 is deposited on the back of the substrate 1. With this constitution, the resistance between the electrodes 6 and 6' is measured and from this value the spectral sensitivity on the short wavelength side is discriminated
COPYRIGHT: (C)1979,JPO&Japio
JP12661877A 1977-10-20 1977-10-20 Discriminating method of spectral sensitivity characteristics of photo diodes Granted JPS5459890A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12661877A JPS5459890A (en) 1977-10-20 1977-10-20 Discriminating method of spectral sensitivity characteristics of photo diodes

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12661877A JPS5459890A (en) 1977-10-20 1977-10-20 Discriminating method of spectral sensitivity characteristics of photo diodes

Publications (2)

Publication Number Publication Date
JPS5459890A true JPS5459890A (en) 1979-05-14
JPS6145872B2 JPS6145872B2 (en) 1986-10-09

Family

ID=14939651

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12661877A Granted JPS5459890A (en) 1977-10-20 1977-10-20 Discriminating method of spectral sensitivity characteristics of photo diodes

Country Status (1)

Country Link
JP (1) JPS5459890A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01146375A (en) * 1987-12-02 1989-06-08 Fujitsu Ltd Method of evaluating semiconductor photodetector
JPH04154176A (en) * 1990-10-17 1992-05-27 Sharp Corp Circuit containing photodetector

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01146375A (en) * 1987-12-02 1989-06-08 Fujitsu Ltd Method of evaluating semiconductor photodetector
JPH04154176A (en) * 1990-10-17 1992-05-27 Sharp Corp Circuit containing photodetector

Also Published As

Publication number Publication date
JPS6145872B2 (en) 1986-10-09

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