JPS56108284A - Semiconductor light detector - Google Patents

Semiconductor light detector

Info

Publication number
JPS56108284A
JPS56108284A JP1008780A JP1008780A JPS56108284A JP S56108284 A JPS56108284 A JP S56108284A JP 1008780 A JP1008780 A JP 1008780A JP 1008780 A JP1008780 A JP 1008780A JP S56108284 A JPS56108284 A JP S56108284A
Authority
JP
Japan
Prior art keywords
region
junction
type
sensitivity
electrodes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1008780A
Other languages
Japanese (ja)
Inventor
Hirobumi Ouchi
Toji Mukai
Sumio Kawakami
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP1008780A priority Critical patent/JPS56108284A/en
Publication of JPS56108284A publication Critical patent/JPS56108284A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
    • H01L31/103—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PN homojunction type

Abstract

PURPOSE:To improve the long-wavelength side sensitivity of a semiconductor light detector by decreasing the forbidden band width of one of the semiconductor layers forming a junction as the distance from the junction increases. CONSTITUTION:Formed on an n<+> substrate 1 is an active region 2 with a conductivity type (p type) different from that of the substrate 1 and having lower impurity concentration than it. When the region 2 is formed, Ge is mixed therein. The mixing mol ratio, Ge/Si, is 0 at the junction J and gradually increases as the distance from the junction increases. Then, an n type diffused region 3 is formed in the region 2, and moreover a p<+> type diffused region 4 is formed therein. Thereafter, an oxide film 5 is formed as a surface protecting film, followed by a reflection preventing film 6 and electrodes 7 and 8. When a reverse bias is applied between the electrodes 7 and 8 of the element thus produced, the region 2 becomes a depletion layer, so that a photodiode capable of high-speed response can be obtained. The spectral sensitivity characteristic of such a photodiode is improved in the sensitivity at the Si absorption end and in longer wavelength bands than that, so that the spectral sensitivity range widens.
JP1008780A 1980-02-01 1980-02-01 Semiconductor light detector Pending JPS56108284A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1008780A JPS56108284A (en) 1980-02-01 1980-02-01 Semiconductor light detector

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1008780A JPS56108284A (en) 1980-02-01 1980-02-01 Semiconductor light detector

Publications (1)

Publication Number Publication Date
JPS56108284A true JPS56108284A (en) 1981-08-27

Family

ID=11740549

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1008780A Pending JPS56108284A (en) 1980-02-01 1980-02-01 Semiconductor light detector

Country Status (1)

Country Link
JP (1) JPS56108284A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61224352A (en) * 1985-03-29 1986-10-06 Matsushita Electronics Corp Solid-state image pickup device
JPH11121729A (en) * 1997-08-20 1999-04-30 Internatl Business Mach Corp <Ibm> Band gap designed active pickcell cell

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5421294A (en) * 1977-07-19 1979-02-17 Mitsubishi Electric Corp Avalanche photo diode

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5421294A (en) * 1977-07-19 1979-02-17 Mitsubishi Electric Corp Avalanche photo diode

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61224352A (en) * 1985-03-29 1986-10-06 Matsushita Electronics Corp Solid-state image pickup device
JPH11121729A (en) * 1997-08-20 1999-04-30 Internatl Business Mach Corp <Ibm> Band gap designed active pickcell cell
US6278102B1 (en) 1997-08-20 2001-08-21 International Business Machines Corporation Method of detecting electromagnetic radiation with bandgap engineered active pixel cell design

Similar Documents

Publication Publication Date Title
US3886579A (en) Avalanche photodiode
JPS55110476A (en) Solidstate image sensor
US4034396A (en) Light sensor having good sensitivity to visible light
JPS5718372A (en) Semiconductor photoreceiving element
JPS56108284A (en) Semiconductor light detector
GB1529451A (en) Optical waveguide couplers
JPS57159070A (en) Manufacture of photo electromotive force element
Yin The pin junction-surface depletion-layer photodiode
JPS57107082A (en) Detector for infrared ray
US4420684A (en) Large-surface fast photodetector sensitive in the 0.8-1.1 μm range
JPS5477088A (en) Semiconductor photo detector
DE10019089C1 (en) Wavelength selective pn junction photodiode
JPS5516408A (en) Detector for multiple light communication
US4973935A (en) Infrared detector
JPS5938748B2 (en) semiconductor photodetector
Hamdi et al. ZnTe extrinsic photodetector for visible integrated optics
US4057822A (en) Channel type photo-electric energy transducer
JPS5721876A (en) Photosensor
JPS5718373A (en) Semiconductor photoreceiving element
JPS54147792A (en) Photo detector of narrow wave length band
JPS60258980A (en) Semiconductor photo detector
JPS595681A (en) Semiconductor light receiving device
JPS54148486A (en) Semiconductor device
SU383125A1 (en) SEMICONDUCTOR PHOTOSENSITIVE DEVICE
JPS6086877A (en) Optical semiconductor device