JPS57107082A - Detector for infrared ray - Google Patents

Detector for infrared ray

Info

Publication number
JPS57107082A
JPS57107082A JP55184512A JP18451280A JPS57107082A JP S57107082 A JPS57107082 A JP S57107082A JP 55184512 A JP55184512 A JP 55184512A JP 18451280 A JP18451280 A JP 18451280A JP S57107082 A JPS57107082 A JP S57107082A
Authority
JP
Japan
Prior art keywords
forbidden band
approximately
layer
aperture
band width
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP55184512A
Other languages
Japanese (ja)
Inventor
Yoshihiro Miyamoto
Mitsuo Yoshikawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP55184512A priority Critical patent/JPS57107082A/en
Publication of JPS57107082A publication Critical patent/JPS57107082A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Light Receiving Elements (AREA)

Abstract

PURPOSE:To obtain sensitivity high enough to detect infrared radiation of long wavelength and reduce the noise by a method wherein the forbidden band width of a surface region is made wider than that of a bulk region including a P-N junction. CONSTITUTION:A compound semiconductor layer 2 which is approximately 2,000Angstrom thick and has a wide forbidden band is formed on a semiconductor substrate 2 which has a narrow forbidden band and is covered by an insulating film 3 of approximately 5,000Angstrom thickness and an aperture W is made. An impurity diffused layer 10 of approximately 5,000Angstrom thickness and an aperture W is made. An impurity diffused layer 10 of approximately 5,000 deg.C depth is formed and is covered by an insulating thin film 7 and an aperture 5 is made and a wiring 6 is formed. As the forbidden band width is widen in the completed infrared detector region 8, the generation-recombination current in the surface region is small and reverse direction characteristics are improved. On the other hand, the incident light passes through the insulating film 7 and the semiconductor layer 2 with the wide forbidden band width and carriers are generated in a depletion layer produced near the bottom 4 of the layer 10, so that the sensitivity in the aimed long wave length band is improved. As the generation-recombination current is small, little noise is produced. And the output impedance is high enough to obtain high efficiency.
JP55184512A 1980-12-24 1980-12-24 Detector for infrared ray Pending JPS57107082A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55184512A JPS57107082A (en) 1980-12-24 1980-12-24 Detector for infrared ray

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55184512A JPS57107082A (en) 1980-12-24 1980-12-24 Detector for infrared ray

Publications (1)

Publication Number Publication Date
JPS57107082A true JPS57107082A (en) 1982-07-03

Family

ID=16154486

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55184512A Pending JPS57107082A (en) 1980-12-24 1980-12-24 Detector for infrared ray

Country Status (1)

Country Link
JP (1) JPS57107082A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61139073A (en) * 1984-12-10 1986-06-26 Mitsubishi Electric Corp Manufacture of infrared detector
JPS62119976A (en) * 1985-11-20 1987-06-01 Fujitsu Ltd Infrared detector
JPS62160776A (en) * 1986-01-08 1987-07-16 コミツサレ・ア・レナジイ・アトミツク Photovoltage detector and manufacture of the same
JPS6461964A (en) * 1987-09-02 1989-03-08 Mitsubishi Electric Corp Semiconductor device
JPH05267695A (en) * 1991-11-06 1993-10-15 Mitsubishi Electric Corp Infrared image sensing device

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61139073A (en) * 1984-12-10 1986-06-26 Mitsubishi Electric Corp Manufacture of infrared detector
JPS62119976A (en) * 1985-11-20 1987-06-01 Fujitsu Ltd Infrared detector
JPS62160776A (en) * 1986-01-08 1987-07-16 コミツサレ・ア・レナジイ・アトミツク Photovoltage detector and manufacture of the same
JPS6461964A (en) * 1987-09-02 1989-03-08 Mitsubishi Electric Corp Semiconductor device
JPH05267695A (en) * 1991-11-06 1993-10-15 Mitsubishi Electric Corp Infrared image sensing device

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