JPS57193073A - Semiconductor radioactive ray detector - Google Patents
Semiconductor radioactive ray detectorInfo
- Publication number
- JPS57193073A JPS57193073A JP56077853A JP7785381A JPS57193073A JP S57193073 A JPS57193073 A JP S57193073A JP 56077853 A JP56077853 A JP 56077853A JP 7785381 A JP7785381 A JP 7785381A JP S57193073 A JPS57193073 A JP S57193073A
- Authority
- JP
- Japan
- Prior art keywords
- region
- type
- leakage current
- electrode
- junction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000002285 radioactive effect Effects 0.000 title abstract 2
- 239000004065 semiconductor Substances 0.000 title abstract 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 239000012535 impurity Substances 0.000 abstract 2
- 230000004888 barrier function Effects 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 230000005855 radiation Effects 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/115—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Measurement Of Radiation (AREA)
- Light Receiving Elements (AREA)
Abstract
PURPOSE:To obtain a semiconductor radioactive ray detector which is not affected by the influence of a reverse leakage current in the detector by providing a high impurity density region at the periphery of a P-N junction or a barrier metal and producing the reverse leakage current from the electrode covered on the high impurity density region. CONSTITUTION:As an example of a radiation detector using a P-N junction type diode structure, a P-type layer 3 is grown on a P<+>type Si substrate 2, an N-type region 4 is diffused in the layer 3. Then an SiO2 6 is covered on the overall surface including the region 4, a window is opened, an electrode 5 is mounted on the exposed region 4, as a P-N junction diode. In this structure, holes are opened at the film 6 at both sides of the region 4, a P<+>type region 8 is diffused at the film 6, and electrodes 9 are mounted. In this manner, most of reverse leakage current is flowed to the electrode 9, and S/N ratio is largely improved.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56077853A JPS57193073A (en) | 1981-05-22 | 1981-05-22 | Semiconductor radioactive ray detector |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56077853A JPS57193073A (en) | 1981-05-22 | 1981-05-22 | Semiconductor radioactive ray detector |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS57193073A true JPS57193073A (en) | 1982-11-27 |
Family
ID=13645613
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56077853A Pending JPS57193073A (en) | 1981-05-22 | 1981-05-22 | Semiconductor radioactive ray detector |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57193073A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59108367A (en) * | 1982-12-13 | 1984-06-22 | Fuji Electric Corp Res & Dev Ltd | Semiconductor radiation dosimeter |
| KR100545801B1 (en) * | 1997-02-10 | 2006-04-21 | 필 팩토리 | Electromagnetic radiation detectors, high sensitivity pixel structures using such detectors and methods of manufacturing such detectors. |
| JP2018505396A (en) * | 2014-12-19 | 2018-02-22 | コミッサリア ア レネルジー アトミーク エ オ ゼネルジ ザルタナテイヴ | Method and neutron detector for realizing a neutron detector |
-
1981
- 1981-05-22 JP JP56077853A patent/JPS57193073A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59108367A (en) * | 1982-12-13 | 1984-06-22 | Fuji Electric Corp Res & Dev Ltd | Semiconductor radiation dosimeter |
| KR100545801B1 (en) * | 1997-02-10 | 2006-04-21 | 필 팩토리 | Electromagnetic radiation detectors, high sensitivity pixel structures using such detectors and methods of manufacturing such detectors. |
| JP2018505396A (en) * | 2014-12-19 | 2018-02-22 | コミッサリア ア レネルジー アトミーク エ オ ゼネルジ ザルタナテイヴ | Method and neutron detector for realizing a neutron detector |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS5515035A (en) | Photo detector | |
| FR2549642B1 (en) | SOLAR CELL | |
| JPS57193073A (en) | Semiconductor radioactive ray detector | |
| JPS5718372A (en) | Semiconductor photoreceiving element | |
| JPS5470776A (en) | Semiconductor device and its manufacture | |
| US3415989A (en) | Scintillation detector using a single crystal of gallium arsenide | |
| JPS5687380A (en) | Semiconductor device for detection of radiant light | |
| JPS5459891A (en) | Photo detector | |
| JPS57107082A (en) | Detector for infrared ray | |
| JPS55102280A (en) | Infrared charge transfer device | |
| JPS57155784A (en) | Photodiode | |
| JPS5587007A (en) | Semiconductor photo position detector | |
| JPS5477088A (en) | Semiconductor photo detector | |
| JPS5390781A (en) | Semiconductor radiation detector | |
| JPS5670675A (en) | Manufacture of photoelectric converter | |
| JPS5512792A (en) | Voltage reference diode | |
| JPS5548964A (en) | High-voltage-resisting planar semiconductor device | |
| JPS54111287A (en) | Resin seal planar-structure semiconductor element | |
| JPS57190357A (en) | Power transistor | |
| JPS5455189A (en) | Photo transistor | |
| JPS61105878A (en) | Semiconductor light-receiving element | |
| JPS54110792A (en) | Avalanche photo diode | |
| JPS55123174A (en) | Semiconductor device | |
| JPS5428581A (en) | Manufacture of semiconductor device | |
| JPS57149981A (en) | Multichannel type radiation detector |