JPS5587007A - Semiconductor photo position detector - Google Patents

Semiconductor photo position detector

Info

Publication number
JPS5587007A
JPS5587007A JP15864578A JP15864578A JPS5587007A JP S5587007 A JPS5587007 A JP S5587007A JP 15864578 A JP15864578 A JP 15864578A JP 15864578 A JP15864578 A JP 15864578A JP S5587007 A JPS5587007 A JP S5587007A
Authority
JP
Japan
Prior art keywords
layer
electrodes
coordinate
electrode
square
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP15864578A
Other languages
Japanese (ja)
Other versions
JPS6057716B2 (en
Inventor
Akinaga Yamamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP53158645A priority Critical patent/JPS6057716B2/en
Publication of JPS5587007A publication Critical patent/JPS5587007A/en
Publication of JPS6057716B2 publication Critical patent/JPS6057716B2/en
Expired legal-status Critical Current

Links

Landscapes

  • Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Optical Transform (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Abstract

PURPOSE: To obtain a coordinate position signal of good linearity by forming a 2nd conduction type square or rectangular layer on the 1st surface of a 1st conduction type semiconductor wafer, by providing electrodes to two sides opposing to the 2nd conduction type layer, and by forming an electrode on the 2nd surface of the wafer.
CONSTITUTION: At square part 13 on the 1st surface of an n-type semiconductor wafer, p-layer 12 is formed and this part is used as a photo detection surface. Along two opposite sides of square 13, p+ regions 14 and 15 of high density are formed and on their surfaces, metal electrodes 17 and 18 are provided as output electrodes; and insulating layer 16 is formed at least at an exposed part of p-n junction of the 1st surface except electrodes and on the 2nd surface, n+ layer and electrode 20 are provided. The remaining part of the n-type semiconductor wafer is n-layer 11. When axis X and Y are considered to be in parallel to two sides 21 and 22 with no electrode, and electrodes respectively, spot light incident to the photo detection surface makes an incident position coordinate signal, under no influence of the y coordinate, appear at electrodes 17 and 18 in proportion to the X coordinate.
COPYRIGHT: (C)1980,JPO&Japio
JP53158645A 1978-12-25 1978-12-25 semiconductor optical position detector Expired JPS6057716B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP53158645A JPS6057716B2 (en) 1978-12-25 1978-12-25 semiconductor optical position detector

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP53158645A JPS6057716B2 (en) 1978-12-25 1978-12-25 semiconductor optical position detector

Publications (2)

Publication Number Publication Date
JPS5587007A true JPS5587007A (en) 1980-07-01
JPS6057716B2 JPS6057716B2 (en) 1985-12-16

Family

ID=15676225

Family Applications (1)

Application Number Title Priority Date Filing Date
JP53158645A Expired JPS6057716B2 (en) 1978-12-25 1978-12-25 semiconductor optical position detector

Country Status (1)

Country Link
JP (1) JPS6057716B2 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6316206A (en) * 1986-07-09 1988-01-23 Nissan Motor Co Ltd Semiconductor optical position detector
JPH0227126U (en) * 1989-08-17 1990-02-22
JP2009509426A (en) * 2005-09-20 2009-03-05 オールフレックス・オーストラリア・プロプライエタリー・リミテッド Portal antenna

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0524613Y2 (en) * 1986-09-30 1993-06-22
WO2019207690A1 (en) 2018-04-25 2019-10-31 ミライアル株式会社 Substrate accommodating container

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6316206A (en) * 1986-07-09 1988-01-23 Nissan Motor Co Ltd Semiconductor optical position detector
JPH0227126U (en) * 1989-08-17 1990-02-22
JP2009509426A (en) * 2005-09-20 2009-03-05 オールフレックス・オーストラリア・プロプライエタリー・リミテッド Portal antenna

Also Published As

Publication number Publication date
JPS6057716B2 (en) 1985-12-16

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