JPS5553466A - Photoelectricity transformer - Google Patents

Photoelectricity transformer

Info

Publication number
JPS5553466A
JPS5553466A JP12882878A JP12882878A JPS5553466A JP S5553466 A JPS5553466 A JP S5553466A JP 12882878 A JP12882878 A JP 12882878A JP 12882878 A JP12882878 A JP 12882878A JP S5553466 A JPS5553466 A JP S5553466A
Authority
JP
Japan
Prior art keywords
layer
crystal
metal film
comb teeth
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12882878A
Other languages
Japanese (ja)
Inventor
Yukinori Kuwano
Masakazu Umetani
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanyo Electric Co Ltd
Original Assignee
Sanyo Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Electric Co Ltd filed Critical Sanyo Electric Co Ltd
Priority to JP12882878A priority Critical patent/JPS5553466A/en
Publication of JPS5553466A publication Critical patent/JPS5553466A/en
Pending legal-status Critical Current

Links

Classifications

    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Photovoltaic Devices (AREA)

Abstract

PURPOSE: To evade effect of unevenness in Si-layer thickness by forming Schottky barrier forming electrode and ohmic contact electrode into comb teeth form for engaing each other on surface of non-crystal Si-layer.
CONSTITUTION: n-n- Non-crystal Si-layer 7 and comb teeth formed metal film 8 are disposed on a ceramic basic plate 6 and also comb teeth formed Ni-layer 9 adapted to engage with the film 8 is arranged on the Si-layer 7 through n+ non-crystal Si- layer 10. In this construction, the metal film 8 forming Shottky barrier and electric pass between ohmic electrodes are irrelevant to thickness of high resistance non- crystal Si and formed on the surface of Si-layer 7 substantially and so unevenness of the layer 7 does not effect and the device can be produced in good reproduction. Entrance beam is entered through the metal film 8 and further directly entered onto the Si-layer 7 and consequently photoelectric transformation efficiency is improved.
COPYRIGHT: (C)1980,JPO&Japio
JP12882878A 1978-10-16 1978-10-16 Photoelectricity transformer Pending JPS5553466A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12882878A JPS5553466A (en) 1978-10-16 1978-10-16 Photoelectricity transformer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12882878A JPS5553466A (en) 1978-10-16 1978-10-16 Photoelectricity transformer

Publications (1)

Publication Number Publication Date
JPS5553466A true JPS5553466A (en) 1980-04-18

Family

ID=14994405

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12882878A Pending JPS5553466A (en) 1978-10-16 1978-10-16 Photoelectricity transformer

Country Status (1)

Country Link
JP (1) JPS5553466A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5449945A (en) * 1993-01-15 1995-09-12 The United States Of America As Represented By The U.S. Department Of Energy Silicon metal-semiconductor-metal photodetector
US5461246A (en) * 1994-05-12 1995-10-24 Regents Of The University Of Minnesota Photodetector with first and second contacts
US5631490A (en) * 1995-01-11 1997-05-20 Lucent Technologies Inc. Metal semiconductor metal photodetectors

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5449945A (en) * 1993-01-15 1995-09-12 The United States Of America As Represented By The U.S. Department Of Energy Silicon metal-semiconductor-metal photodetector
US5691563A (en) * 1993-01-15 1997-11-25 Sandia National Laboratories Silicon metal-semiconductor-metal photodetector
US5461246A (en) * 1994-05-12 1995-10-24 Regents Of The University Of Minnesota Photodetector with first and second contacts
US5631490A (en) * 1995-01-11 1997-05-20 Lucent Technologies Inc. Metal semiconductor metal photodetectors

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