JPS55148457A - Semiconductor device with electrode - Google Patents
Semiconductor device with electrodeInfo
- Publication number
- JPS55148457A JPS55148457A JP5560079A JP5560079A JPS55148457A JP S55148457 A JPS55148457 A JP S55148457A JP 5560079 A JP5560079 A JP 5560079A JP 5560079 A JP5560079 A JP 5560079A JP S55148457 A JPS55148457 A JP S55148457A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- majority
- conducting type
- electrode
- barrier against
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title abstract 6
- 230000004888 barrier function Effects 0.000 abstract 4
- 239000012535 impurity Substances 0.000 abstract 3
- 239000000969 carrier Substances 0.000 abstract 2
- 238000005036 potential barrier Methods 0.000 abstract 2
- 230000015572 biosynthetic process Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/083—Anode or cathode regions of thyristors or gated bipolar-mode devices
- H01L29/0834—Anode regions of thyristors or gated bipolar-mode devices, e.g. supplementary regions surrounding anode regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
- H01L29/456—Ohmic electrodes on silicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/47—Schottky barrier electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/868—PIN diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
- Bipolar Transistors (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
PURPOSE:To eliminate formation of a barrier against both of majority and minority carriers in a semiconductor device by ohmically attaching a metallic electrode through a semiconductor layer with the same and reverse conducting type electrodes of high impurity density to a semiconductor layer. CONSTITUTION:A metallic electrode 3 is ohmically attached through a semiconductor layer 5 with electrode to a semiconductor layer 1. In this case, the layer 5 has the same conducting type as the layer 1 and consists of a layer 6 having higher impurity density than the layer 1, and a layer 7 having reverse conducting type to the layer 1 and higher impurity density than the layer 1. In this manner, even if there is a potential barrier to the minority carrier between the layers 1 and 6, there exists substantially no barrier against the majority carrier. Even if there exists reverse conducting type potential barrier against the majority carrier between the layers 1 and 7, the minority carrier is absorbed to the layer 7, and there is no barrier thereto. Therefore, there is formed no barrier against both the majority and the minority carriers.
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5560079A JPS5949711B2 (en) | 1979-05-07 | 1979-05-07 | Semiconductor device with electrodes |
GB8006652A GB2050694B (en) | 1979-05-07 | 1980-02-27 | Electrode structure for a semiconductor device |
NLAANVRAGE8001226,A NL188434C (en) | 1979-05-07 | 1980-02-29 | ELECTRODESTRUCTURE. |
DE19803008034 DE3008034A1 (en) | 1979-05-07 | 1980-03-03 | ELECTRODE DEVICE FOR A SEMICONDUCTOR DEVICE |
CA000347000A CA1150417A (en) | 1979-05-07 | 1980-03-05 | Electrode structure for a semiconductor device |
FR8004965A FR2456389B1 (en) | 1979-05-07 | 1980-03-05 | ELECTRODES STRUCTURE FOR SEMICONDUCTOR DEVICES |
US06/512,942 US4587547A (en) | 1979-05-07 | 1983-07-12 | Electrode structure for a semiconductor devices |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5560079A JPS5949711B2 (en) | 1979-05-07 | 1979-05-07 | Semiconductor device with electrodes |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS55148457A true JPS55148457A (en) | 1980-11-19 |
JPS5949711B2 JPS5949711B2 (en) | 1984-12-04 |
Family
ID=13003261
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP5560079A Expired JPS5949711B2 (en) | 1979-05-07 | 1979-05-07 | Semiconductor device with electrodes |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5949711B2 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5858361U (en) * | 1981-10-16 | 1983-04-20 | オリジン電気株式会社 | semiconductor equipment |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5321669B2 (en) | 2010-11-25 | 2013-10-23 | 株式会社デンソー | Semiconductor device |
-
1979
- 1979-05-07 JP JP5560079A patent/JPS5949711B2/en not_active Expired
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5858361U (en) * | 1981-10-16 | 1983-04-20 | オリジン電気株式会社 | semiconductor equipment |
JPH0134356Y2 (en) * | 1981-10-16 | 1989-10-19 |
Also Published As
Publication number | Publication date |
---|---|
JPS5949711B2 (en) | 1984-12-04 |
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