JPS55121678A - Charge transfer device - Google Patents

Charge transfer device

Info

Publication number
JPS55121678A
JPS55121678A JP2961979A JP2961979A JPS55121678A JP S55121678 A JPS55121678 A JP S55121678A JP 2961979 A JP2961979 A JP 2961979A JP 2961979 A JP2961979 A JP 2961979A JP S55121678 A JPS55121678 A JP S55121678A
Authority
JP
Japan
Prior art keywords
recesses
transfer device
charge transfer
type silicon
rows
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2961979A
Other languages
Japanese (ja)
Inventor
Kunihiko Hirashima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Pioneer Corp
Original Assignee
Pioneer Electronic Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Pioneer Electronic Corp filed Critical Pioneer Electronic Corp
Priority to JP2961979A priority Critical patent/JPS55121678A/en
Publication of JPS55121678A publication Critical patent/JPS55121678A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/105—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
    • H01L27/1057—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components comprising charge coupled devices [CCD] or charge injection devices [CID]

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Abstract

PURPOSE:To improve the transfer efficiency of a charge transfer device by so providing respective storage regions as to dispose it along the transfer direction of information carrier with barrier means. CONSTITUTION:A low density P-type silicon layer 2 is epitaxially grown on one main surface of a high density N-type silicon substrate 1, and longitudinal holes, that is recess 11-15 and 21-25 of two rows substantially in parallel are formed on the essential surface of the layer 2 by an etching process. Then, an oxide film of predetermined thickness is formed on the surface including the recesses as a gate insulating film 3. Thereafter, a common gate electrode G1 is coated on the silicon layer surface between the adjacent recesses and in the recesses of both rows.
JP2961979A 1979-03-14 1979-03-14 Charge transfer device Pending JPS55121678A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2961979A JPS55121678A (en) 1979-03-14 1979-03-14 Charge transfer device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2961979A JPS55121678A (en) 1979-03-14 1979-03-14 Charge transfer device

Publications (1)

Publication Number Publication Date
JPS55121678A true JPS55121678A (en) 1980-09-18

Family

ID=12281091

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2961979A Pending JPS55121678A (en) 1979-03-14 1979-03-14 Charge transfer device

Country Status (1)

Country Link
JP (1) JPS55121678A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS631067A (en) * 1986-06-20 1988-01-06 Matsushita Electronics Corp Charge coupled device
US5083173A (en) * 1986-11-28 1992-01-21 Matsushita Electronics Corporation Charge coupled device for a solid state image pick-up device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS631067A (en) * 1986-06-20 1988-01-06 Matsushita Electronics Corp Charge coupled device
US5083173A (en) * 1986-11-28 1992-01-21 Matsushita Electronics Corporation Charge coupled device for a solid state image pick-up device

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