JPS5730374A - Semiconductor device and manufacture thereof - Google Patents

Semiconductor device and manufacture thereof

Info

Publication number
JPS5730374A
JPS5730374A JP10416280A JP10416280A JPS5730374A JP S5730374 A JPS5730374 A JP S5730374A JP 10416280 A JP10416280 A JP 10416280A JP 10416280 A JP10416280 A JP 10416280A JP S5730374 A JPS5730374 A JP S5730374A
Authority
JP
Japan
Prior art keywords
layers
semiconductor
single crystalline
channels
secondary electron
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10416280A
Other languages
Japanese (ja)
Other versions
JPS6353706B2 (en
Inventor
Sukehisa Hiyamizu
Toshio Fujii
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP10416280A priority Critical patent/JPS5730374A/en
Publication of JPS5730374A publication Critical patent/JPS5730374A/en
Publication of JPS6353706B2 publication Critical patent/JPS6353706B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier

Abstract

PURPOSE:To form channels insulated from each other in a semiconductor device by utilizing secondary electron gas stored on the respective boundaries of crystalline layer groups in which channel forming layers and secondary electron gas supplying layers are alternately laminated as channels. CONSTITUTION:Single crystalline layers (channel forming layers) 2 having relatively large electron-affinity and relatively small energy band gap and single crystalline layers (secondary electron gas supplying layers) 3 having electron affinity smaller than the semiconductor forming the channel forming layers and large energy band gap in the semiconductor and n type impurity are alternately laminated on a substrate 1. Channels 4 are formed in the vicinity of the boundaries between the layers 2 and 3. Electrode wiring regions are inclined with respect to the surface of the channel, and n type high density semiconductor single crystalline layer 5 and ohmic electrode 6 are formed on the region.
JP10416280A 1980-07-29 1980-07-29 Semiconductor device and manufacture thereof Granted JPS5730374A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10416280A JPS5730374A (en) 1980-07-29 1980-07-29 Semiconductor device and manufacture thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10416280A JPS5730374A (en) 1980-07-29 1980-07-29 Semiconductor device and manufacture thereof

Publications (2)

Publication Number Publication Date
JPS5730374A true JPS5730374A (en) 1982-02-18
JPS6353706B2 JPS6353706B2 (en) 1988-10-25

Family

ID=14373356

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10416280A Granted JPS5730374A (en) 1980-07-29 1980-07-29 Semiconductor device and manufacture thereof

Country Status (1)

Country Link
JP (1) JPS5730374A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59106160A (en) * 1982-12-11 1984-06-19 Nippon Telegr & Teleph Corp <Ntt> Field effect transistor
JPS59228768A (en) * 1983-06-11 1984-12-22 Agency Of Ind Science & Technol Semiconductor integrated circuit
JPS6184870A (en) * 1984-10-03 1986-04-30 Hitachi Ltd Semiconductor device
US4983251A (en) * 1985-06-20 1991-01-08 U.S. Philips Corporation Method of manufacturing semiconductor devices
JP2011124273A (en) * 2009-12-08 2011-06-23 Toyota Motor Corp Wiring structure manufacturing method, and wiring structure
JPWO2011161791A1 (en) * 2010-06-24 2013-08-19 富士通株式会社 Semiconductor device
CN107516667A (en) * 2017-08-24 2017-12-26 北京华进创威电子有限公司 A kind of the GaN HEMT structure cells and device of more Two-dimensional electron gas channels

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011228720A (en) * 2011-05-30 2011-11-10 Panasonic Corp Semiconductor device

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59106160A (en) * 1982-12-11 1984-06-19 Nippon Telegr & Teleph Corp <Ntt> Field effect transistor
JPS6355873B2 (en) * 1982-12-11 1988-11-04 Nippon Telegraph & Telephone
JPS59228768A (en) * 1983-06-11 1984-12-22 Agency Of Ind Science & Technol Semiconductor integrated circuit
JPS6184870A (en) * 1984-10-03 1986-04-30 Hitachi Ltd Semiconductor device
JPH0812909B2 (en) * 1984-10-03 1996-02-07 株式会社日立製作所 Semiconductor device
US4983251A (en) * 1985-06-20 1991-01-08 U.S. Philips Corporation Method of manufacturing semiconductor devices
JP2011124273A (en) * 2009-12-08 2011-06-23 Toyota Motor Corp Wiring structure manufacturing method, and wiring structure
JPWO2011161791A1 (en) * 2010-06-24 2013-08-19 富士通株式会社 Semiconductor device
US9190507B2 (en) 2010-06-24 2015-11-17 Fujitsu Limited Semiconductor device
US10453948B2 (en) 2010-06-24 2019-10-22 Fujitsu Limited Semiconductor device which comprises transistor and diode
CN107516667A (en) * 2017-08-24 2017-12-26 北京华进创威电子有限公司 A kind of the GaN HEMT structure cells and device of more Two-dimensional electron gas channels

Also Published As

Publication number Publication date
JPS6353706B2 (en) 1988-10-25

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