JPS5791581A - Semiconductor laser element and manufacture therefor - Google Patents

Semiconductor laser element and manufacture therefor

Info

Publication number
JPS5791581A
JPS5791581A JP16932080A JP16932080A JPS5791581A JP S5791581 A JPS5791581 A JP S5791581A JP 16932080 A JP16932080 A JP 16932080A JP 16932080 A JP16932080 A JP 16932080A JP S5791581 A JPS5791581 A JP S5791581A
Authority
JP
Japan
Prior art keywords
layer
superimposed
striped groove
furthermore
epitaxial growth
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP16932080A
Other languages
Japanese (ja)
Other versions
JPS6212678B2 (en
Inventor
Jiyunkou Takagi
Toshiro Hayakawa
Naotaka Otsuka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP16932080A priority Critical patent/JPS5791581A/en
Publication of JPS5791581A publication Critical patent/JPS5791581A/en
Publication of JPS6212678B2 publication Critical patent/JPS6212678B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2231—Buried stripe structure with inner confining structure only between the active layer and the upper electrode

Landscapes

  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To improve the yield of elements by a method wherein a clad layer, active layer and light guide layer are successively laminated on a substrate and furthermore, an epitaxial growth layer with a W type striped groove being provided thereon is superimposed. CONSTITUTION:A clad layer 22, active layer 23, and light guide layer 24 are successively stacked on a substrate 21. Next, the first epitaxial growth layer 25 processed a W type striped groove at the layer 24 is superimposed. Furthermore, a buried layer 26 burying the striped groove and the second epitaxial growth layer 24 having a current path 28 located at the central section of the striped groove are superimposed. Furthermore, a P type electrode 30 and an N type electrode 29 are successively formed on both surfaces.
JP16932080A 1980-11-28 1980-11-28 Semiconductor laser element and manufacture therefor Granted JPS5791581A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16932080A JPS5791581A (en) 1980-11-28 1980-11-28 Semiconductor laser element and manufacture therefor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16932080A JPS5791581A (en) 1980-11-28 1980-11-28 Semiconductor laser element and manufacture therefor

Publications (2)

Publication Number Publication Date
JPS5791581A true JPS5791581A (en) 1982-06-07
JPS6212678B2 JPS6212678B2 (en) 1987-03-19

Family

ID=15884350

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16932080A Granted JPS5791581A (en) 1980-11-28 1980-11-28 Semiconductor laser element and manufacture therefor

Country Status (1)

Country Link
JP (1) JPS5791581A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0114109A2 (en) * 1983-01-14 1984-07-25 Kabushiki Kaisha Toshiba Semiconductor laser device and method for manufacturing the same
US4737237A (en) * 1985-09-24 1988-04-12 Guy Chaminant Process for producing a buried strip semiconductor laser with or without a defractive network

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0114109A2 (en) * 1983-01-14 1984-07-25 Kabushiki Kaisha Toshiba Semiconductor laser device and method for manufacturing the same
US4737237A (en) * 1985-09-24 1988-04-12 Guy Chaminant Process for producing a buried strip semiconductor laser with or without a defractive network

Also Published As

Publication number Publication date
JPS6212678B2 (en) 1987-03-19

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