JPS57145389A - Semiconductor laser device - Google Patents

Semiconductor laser device

Info

Publication number
JPS57145389A
JPS57145389A JP9530681A JP9530681A JPS57145389A JP S57145389 A JPS57145389 A JP S57145389A JP 9530681 A JP9530681 A JP 9530681A JP 9530681 A JP9530681 A JP 9530681A JP S57145389 A JPS57145389 A JP S57145389A
Authority
JP
Japan
Prior art keywords
layer
type
optical guide
laser device
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9530681A
Other languages
Japanese (ja)
Other versions
JPS596079B2 (en
Inventor
Naoki Kayane
Kazutoshi Saito
Noriyuki Shige
Ryoichi Ito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP9530681A priority Critical patent/JPS596079B2/en
Publication of JPS57145389A publication Critical patent/JPS57145389A/en
Publication of JPS596079B2 publication Critical patent/JPS596079B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching

Landscapes

  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To obtain the titled device wherein threshold current values are inclined and the light output is large, in the semiconducotor laser device having a double heterogeneous structure, by providing an optical guide layer at the part adjacent to an active layer, wherein the difference in the width of an inhibition band is at least 0.15 eV or more, and providing a carrier confining layer between the active layer and the optical guide layer. CONSTITUTION:On a GaAs substrate 10, an N type Ga1-xAlxAs (0.2<=x<=0.6) clad layer 1, an N type Ga1-yAlyAs (0.1<=y<=0.5) optical guide layer 2, an N type Ga1-zAlzAs (0.1<=z<=0.5) carrier confining layer 5, a Ga1-wAlwAs (0<=w<=0.3) active layer 3, and a P type Ga1-vAlvAs (0.2<=v<=0.6) clad layer 4 are laminated and grown, and they are surrounded by a Ga1-uAlAs (0.1<=u<=0.6) embedding layer 6. Then an electrode 11 is deposited on the bottom surface 1 of the substrate 10. An insulating layer 12 is provided on the layer 4. An opening is provided in the ligitudinal direction. An electrode 13 is provided so as to contact with the layer 4. A power source is connected to the electrodes 11 and 13.
JP9530681A 1981-06-22 1981-06-22 semiconductor laser equipment Expired JPS596079B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9530681A JPS596079B2 (en) 1981-06-22 1981-06-22 semiconductor laser equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9530681A JPS596079B2 (en) 1981-06-22 1981-06-22 semiconductor laser equipment

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP11467678A Division JPS5541741A (en) 1978-09-20 1978-09-20 Semiconductor laser device

Publications (2)

Publication Number Publication Date
JPS57145389A true JPS57145389A (en) 1982-09-08
JPS596079B2 JPS596079B2 (en) 1984-02-08

Family

ID=14134075

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9530681A Expired JPS596079B2 (en) 1981-06-22 1981-06-22 semiconductor laser equipment

Country Status (1)

Country Link
JP (1) JPS596079B2 (en)

Also Published As

Publication number Publication date
JPS596079B2 (en) 1984-02-08

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